JPS6171667A - ｎ型ＧａＡｓ用オ−ミツク電極 - Google Patents

ｎ型ＧａＡｓ用オ−ミツク電極

Info

Publication number
JPS6171667A
JPS6171667A JP59193313A JP19331384A JPS6171667A JP S6171667 A JPS6171667 A JP S6171667A JP 59193313 A JP59193313 A JP 59193313A JP 19331384 A JP19331384 A JP 19331384A JP S6171667 A JPS6171667 A JP S6171667A
Authority
JP
Japan
Prior art keywords
layer
ohmic electrode
type gaas
contact resistance
people
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59193313A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0466107B2 (enrdf_load_stackoverflow
Inventor
Hiroyoshi Hamada
弘喜 浜田
Masayuki Shono
昌幸 庄野
Masaharu Honda
正治 本多
Shunichi Kobayashi
俊一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59193313A priority Critical patent/JPS6171667A/ja
Publication of JPS6171667A publication Critical patent/JPS6171667A/ja
Publication of JPH0466107B2 publication Critical patent/JPH0466107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59193313A 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極 Granted JPS6171667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59193313A JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59193313A JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Publications (2)

Publication Number Publication Date
JPS6171667A true JPS6171667A (ja) 1986-04-12
JPH0466107B2 JPH0466107B2 (enrdf_load_stackoverflow) 1992-10-22

Family

ID=16305824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59193313A Granted JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Country Status (1)

Country Link
JP (1) JPS6171667A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6449259A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device
US5378926A (en) * 1991-09-30 1995-01-03 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6449259A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device
US5378926A (en) * 1991-09-30 1995-01-03 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes

Also Published As

Publication number Publication date
JPH0466107B2 (enrdf_load_stackoverflow) 1992-10-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term