JPH0466107B2 - - Google Patents

Info

Publication number
JPH0466107B2
JPH0466107B2 JP59193313A JP19331384A JPH0466107B2 JP H0466107 B2 JPH0466107 B2 JP H0466107B2 JP 59193313 A JP59193313 A JP 59193313A JP 19331384 A JP19331384 A JP 19331384A JP H0466107 B2 JPH0466107 B2 JP H0466107B2
Authority
JP
Japan
Prior art keywords
layer
contact resistance
type gaas
alloying
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59193313A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6171667A (ja
Inventor
Hiroyoshi Hamada
Masayuki Shono
Masaharu Pponda
Shunichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59193313A priority Critical patent/JPS6171667A/ja
Publication of JPS6171667A publication Critical patent/JPS6171667A/ja
Publication of JPH0466107B2 publication Critical patent/JPH0466107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59193313A 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極 Granted JPS6171667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59193313A JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59193313A JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Publications (2)

Publication Number Publication Date
JPS6171667A JPS6171667A (ja) 1986-04-12
JPH0466107B2 true JPH0466107B2 (enrdf_load_stackoverflow) 1992-10-22

Family

ID=16305824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59193313A Granted JPS6171667A (ja) 1984-09-14 1984-09-14 ｎ型ＧａＡｓ用オ−ミツク電極

Country Status (1)

Country Link
JP (1) JPS6171667A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754849B2 (ja) * 1987-08-19 1995-06-07 三菱電機株式会社 半導体装置
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes

Also Published As

Publication number Publication date
JPS6171667A (ja) 1986-04-12

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term