JPS6165448A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6165448A
JPS6165448A JP18840384A JP18840384A JPS6165448A JP S6165448 A JPS6165448 A JP S6165448A JP 18840384 A JP18840384 A JP 18840384A JP 18840384 A JP18840384 A JP 18840384A JP S6165448 A JPS6165448 A JP S6165448A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor layer
forming
insulation film
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18840384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0158659B2 (enrdf_load_stackoverflow
Inventor
Naoki Yuya
直毅 油谷
Shiro Hine
日根 史郎
Masao Yamawaki
正雄 山脇
Masafumi Ueno
雅史 上野
Satoshi Yamakawa
聡 山川
Masaaki Kimata
雅章 木股
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18840384A priority Critical patent/JPS6165448A/ja
Publication of JPS6165448A publication Critical patent/JPS6165448A/ja
Publication of JPH0158659B2 publication Critical patent/JPH0158659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP18840384A 1984-09-07 1984-09-07 半導体装置の製造方法 Granted JPS6165448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18840384A JPS6165448A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18840384A JPS6165448A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6165448A true JPS6165448A (ja) 1986-04-04
JPH0158659B2 JPH0158659B2 (enrdf_load_stackoverflow) 1989-12-13

Family

ID=16223033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18840384A Granted JPS6165448A (ja) 1984-09-07 1984-09-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6165448A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0158659B2 (enrdf_load_stackoverflow) 1989-12-13

Similar Documents

Publication Publication Date Title
JPS6016420A (ja) 選択的エピタキシヤル成長方法
US4775644A (en) Zero bird-beak oxide isolation scheme for integrated circuits
JPS6165448A (ja) 半導体装置の製造方法
JPH06342911A (ja) 半導体装置の製造方法
KR0176193B1 (ko) 반도체 장치의 소자 분리 방법
JPH05267448A (ja) 半導体装置の素子分離方法
KR100209714B1 (ko) 반도체소자의 격리막 및 이의 형성방법
JPH0338733B2 (enrdf_load_stackoverflow)
JPH03205846A (ja) 半導体装置の製造方法
JPS6165447A (ja) 半導体装置の製造方法
KR100273324B1 (ko) 듀얼 게이트산화막 제조방법
KR19990060858A (ko) 반도체 소자의 소자 분리막 형성 방법
JPH0766277A (ja) 素子分離方法及び半導体装置
KR19990003944A (ko) 반도체 장치의 미세구조 형성방법
JPH01214142A (ja) 半導体装置の製造方法
JPH01162351A (ja) 半導体装置の製造方法
KR0163742B1 (ko) T형 게이트의 형성방법
KR100249150B1 (ko) 필드산화막 형성방법
JPH0298933A (ja) 半導体装置の製造方法
JPH0443663A (ja) 半導体装置およびその製造方法
JPS6246527A (ja) 半導体装置の製造方法
JPH0613459A (ja) 素子分離方法及び半導体装置
JPS6049677A (ja) 電界効果トランジスタの製造方法
JPS61107747A (ja) 半導体装置の製造方法
JPH05335407A (ja) 半導体装置の製造方法