JPH0158659B2 - - Google Patents
Info
- Publication number
- JPH0158659B2 JPH0158659B2 JP18840384A JP18840384A JPH0158659B2 JP H0158659 B2 JPH0158659 B2 JP H0158659B2 JP 18840384 A JP18840384 A JP 18840384A JP 18840384 A JP18840384 A JP 18840384A JP H0158659 B2 JPH0158659 B2 JP H0158659B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor layer
- forming
- alignment pattern
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18840384A JPS6165448A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18840384A JPS6165448A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6165448A JPS6165448A (ja) | 1986-04-04 |
JPH0158659B2 true JPH0158659B2 (enrdf_load_stackoverflow) | 1989-12-13 |
Family
ID=16223033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18840384A Granted JPS6165448A (ja) | 1984-09-07 | 1984-09-07 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6165448A (enrdf_load_stackoverflow) |
-
1984
- 1984-09-07 JP JP18840384A patent/JPS6165448A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6165448A (ja) | 1986-04-04 |
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