JPS6158264A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6158264A
JPS6158264A JP59178506A JP17850684A JPS6158264A JP S6158264 A JPS6158264 A JP S6158264A JP 59178506 A JP59178506 A JP 59178506A JP 17850684 A JP17850684 A JP 17850684A JP S6158264 A JPS6158264 A JP S6158264A
Authority
JP
Japan
Prior art keywords
gto
gate
channel
type
emitter region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59178506A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369181B2 (enrdf_load_stackoverflow
Inventor
Yasuo Yamaguchi
康夫 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Original Assignee
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd filed Critical International Rectifier Corp Japan Ltd
Priority to JP59178506A priority Critical patent/JPS6158264A/ja
Publication of JPS6158264A publication Critical patent/JPS6158264A/ja
Publication of JPH0369181B2 publication Critical patent/JPH0369181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59178506A 1984-08-29 1984-08-29 半導体装置 Granted JPS6158264A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59178506A JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178506A JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS6158264A true JPS6158264A (ja) 1986-03-25
JPH0369181B2 JPH0369181B2 (enrdf_load_stackoverflow) 1991-10-31

Family

ID=16049652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59178506A Granted JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS6158264A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209172A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JPS63312047A (ja) * 1987-06-10 1988-12-20 Hoden Seimitsu Kako Kenkyusho Ltd Ｎｃ工作機械における工作物位置計測用制御装置
US5298769A (en) * 1992-03-31 1994-03-29 Kabushiki Kaisha Toshiba GTO thyristor capable of preventing parasitic thyristors from being generated

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191518A (ja) * 1983-12-05 1985-09-30 ゼネラル・エレクトリツク・カンパニイ Ｉｇｔおよびｍｏｓｆｅｔ構造を含む集積化電力スイツチング半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191518A (ja) * 1983-12-05 1985-09-30 ゼネラル・エレクトリツク・カンパニイ Ｉｇｔおよびｍｏｓｆｅｔ構造を含む集積化電力スイツチング半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209172A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JPS63312047A (ja) * 1987-06-10 1988-12-20 Hoden Seimitsu Kako Kenkyusho Ltd Ｎｃ工作機械における工作物位置計測用制御装置
US5298769A (en) * 1992-03-31 1994-03-29 Kabushiki Kaisha Toshiba GTO thyristor capable of preventing parasitic thyristors from being generated

Also Published As

Publication number Publication date
JPH0369181B2 (enrdf_load_stackoverflow) 1991-10-31

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Legal Events

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