JPH0369181B2 - - Google Patents

Info

Publication number
JPH0369181B2
JPH0369181B2 JP59178506A JP17850684A JPH0369181B2 JP H0369181 B2 JPH0369181 B2 JP H0369181B2 JP 59178506 A JP59178506 A JP 59178506A JP 17850684 A JP17850684 A JP 17850684A JP H0369181 B2 JPH0369181 B2 JP H0369181B2
Authority
JP
Japan
Prior art keywords
type
emitter region
region
gto
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59178506A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158264A (ja
Inventor
Yasuo Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Inter Electronics Corp
Original Assignee
Nihon Inter Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Inter Electronics Corp filed Critical Nihon Inter Electronics Corp
Priority to JP59178506A priority Critical patent/JPS6158264A/ja
Publication of JPS6158264A publication Critical patent/JPS6158264A/ja
Publication of JPH0369181B2 publication Critical patent/JPH0369181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59178506A 1984-08-29 1984-08-29 半導体装置 Granted JPS6158264A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59178506A JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178506A JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS6158264A JPS6158264A (ja) 1986-03-25
JPH0369181B2 true JPH0369181B2 (enrdf_load_stackoverflow) 1991-10-31

Family

ID=16049652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59178506A Granted JPS6158264A (ja) 1984-08-29 1984-08-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS6158264A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2557367B2 (ja) * 1987-02-26 1996-11-27 株式会社東芝 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JPS63312047A (ja) * 1987-06-10 1988-12-20 Hoden Seimitsu Kako Kenkyusho Ltd Ｎｃ工作機械における工作物位置計測用制御装置
JP3119931B2 (ja) * 1992-03-31 2000-12-25 株式会社東芝 サイリスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures

Also Published As

Publication number Publication date
JPS6158264A (ja) 1986-03-25

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