JPS6156618B2 - - Google Patents
Info
- Publication number
- JPS6156618B2 JPS6156618B2 JP1819377A JP1819377A JPS6156618B2 JP S6156618 B2 JPS6156618 B2 JP S6156618B2 JP 1819377 A JP1819377 A JP 1819377A JP 1819377 A JP1819377 A JP 1819377A JP S6156618 B2 JPS6156618 B2 JP S6156618B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- forming
- polymer insulating
- organic polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 150000001343 alkyl silanes Chemical class 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000002184 metal Substances 0.000 description 13
- 239000002952 polymeric resin Substances 0.000 description 8
- 229920003002 synthetic resin Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000628997 Flos Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1819377A JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1819377A JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53104185A JPS53104185A (en) | 1978-09-11 |
| JPS6156618B2 true JPS6156618B2 (enrdf_load_stackoverflow) | 1986-12-03 |
Family
ID=11964780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1819377A Granted JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53104185A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654295A (en) * | 1983-12-05 | 1987-03-31 | Energy Conversion Devices, Inc. | Method of making short channel thin film field effect transistor |
| JPS60164364A (ja) * | 1984-02-07 | 1985-08-27 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
| TWI339444B (en) | 2007-05-30 | 2011-03-21 | Au Optronics Corp | Conductor structure, pixel structure, and methods of forming the same |
-
1977
- 1977-02-23 JP JP1819377A patent/JPS53104185A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53104185A (en) | 1978-09-11 |
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