JPS6153864B2 - - Google Patents

Info

Publication number
JPS6153864B2
JPS6153864B2 JP53087996A JP8799678A JPS6153864B2 JP S6153864 B2 JPS6153864 B2 JP S6153864B2 JP 53087996 A JP53087996 A JP 53087996A JP 8799678 A JP8799678 A JP 8799678A JP S6153864 B2 JPS6153864 B2 JP S6153864B2
Authority
JP
Japan
Prior art keywords
layer
mask
mask layer
semiconductor layer
polycrystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53087996A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5515230A (en
Inventor
Tetsushi Sakai
Yoshiharu Kobayashi
Yasusuke Yamamoto
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8799678A priority Critical patent/JPS5515230A/ja
Priority to CA331,965A priority patent/CA1129118A/en
Priority to FR7918558A priority patent/FR2433833A1/fr
Priority to US06/058,417 priority patent/US4379001A/en
Priority to DE19792928923 priority patent/DE2928923A1/de
Priority to GB7924980A priority patent/GB2030002B/en
Priority to NLAANVRAGE7905607,A priority patent/NL189102C/xx
Publication of JPS5515230A publication Critical patent/JPS5515230A/ja
Publication of JPS6153864B2 publication Critical patent/JPS6153864B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8799678A 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method Granted JPS5515230A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8799678A JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method
CA331,965A CA1129118A (en) 1978-07-19 1979-07-17 Semiconductor devices and method of manufacturing the same
FR7918558A FR2433833A1 (fr) 1978-07-19 1979-07-18 Semi-conducteur comportant des regions de silicium en forme de projections a profil particulier et son procede de fabrication
US06/058,417 US4379001A (en) 1978-07-19 1979-07-18 Method of making semiconductor devices
DE19792928923 DE2928923A1 (de) 1978-07-19 1979-07-18 Halbleitervorrichtung
GB7924980A GB2030002B (en) 1978-07-19 1979-07-18 Semiconductor devices and methods of manufacturing them
NLAANVRAGE7905607,A NL189102C (nl) 1978-07-19 1979-07-19 Transistor en werkwijze voor het vervaardigen daarvan.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8799678A JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5515230A JPS5515230A (en) 1980-02-02
JPS6153864B2 true JPS6153864B2 (enExample) 1986-11-19

Family

ID=13930402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8799678A Granted JPS5515230A (en) 1978-07-19 1978-07-19 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5515230A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135976A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of field effect semiconductor device of junction type
JPS57109371A (en) * 1980-12-26 1982-07-07 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS62367A (ja) * 1985-06-26 1987-01-06 フジタ工業株式会社 不燃建造物
JP2746289B2 (ja) * 1989-09-09 1998-05-06 忠弘 大見 素子の作製方法並びに半導体素子およびその作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915495B2 (ja) * 1974-10-04 1984-04-10 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
JPS5515230A (en) 1980-02-02

Similar Documents

Publication Publication Date Title
JPH0355984B2 (enExample)
JPS5928992B2 (ja) Ｍｏｓトランジスタおよびその製造方法
JPH0640582B2 (ja) 絶縁ゲ−ト電界効果トランジスタの製造方法
KR0159763B1 (ko) 반도체 장치
JP2501806B2 (ja) 壁スペ−サを有するバイポ−ラ半導体装置の製造方法
JPH0828379B2 (ja) 半導体装置の製造方法
JPS5852352B2 (ja) 電界効果型トランジスタの製法
RU1830156C (ru) Способ изготовлени полупроводниковых приборов
JPS6159543B2 (enExample)
JP3360970B2 (ja) 半導体装置の製造方法
JP2663632B2 (ja) 半導体装置及びその製造方法
JPH0239091B2 (enExample)
JPH06168953A (ja) バイポーラトランジスタ
JP2718101B2 (ja) 半導体装置の製造方法
JPS5919475B2 (ja) 半導体装置の製法
JP2712889B2 (ja) 半導体装置の製造方法
JPH11289082A (ja) 半導体装置及び半導体装置の製造方法
JPH0213460B2 (enExample)
JPS6239538B2 (enExample)
JPH1126756A (ja) 半導体装置の製造方法
JPS647501B2 (enExample)
JPS60103642A (ja) 半導体装置およびその製造方法
JPS6080275A (ja) 半導体装置の製造方法
JPH0240921A (ja) バイポーラトランジスタの製造方法
JPH0239093B2 (enExample)