JPS6149760B2 - - Google Patents

Info

Publication number
JPS6149760B2
JPS6149760B2 JP53007976A JP797678A JPS6149760B2 JP S6149760 B2 JPS6149760 B2 JP S6149760B2 JP 53007976 A JP53007976 A JP 53007976A JP 797678 A JP797678 A JP 797678A JP S6149760 B2 JPS6149760 B2 JP S6149760B2
Authority
JP
Japan
Prior art keywords
pair
potential
transistors
digit line
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53007976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54101230A (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP797678A priority Critical patent/JPS54101230A/ja
Publication of JPS54101230A publication Critical patent/JPS54101230A/ja
Publication of JPS6149760B2 publication Critical patent/JPS6149760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP797678A 1978-01-26 1978-01-26 Dynamic mos memory circuit Granted JPS54101230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP797678A JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP797678A JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60221272A Division JPS6192497A (ja) 1985-10-04 1985-10-04 メモリ回路
JP61025368A Division JPS61180996A (ja) 1986-02-07 1986-02-07 ダイナミツクmosメモリ装置

Publications (2)

Publication Number Publication Date
JPS54101230A JPS54101230A (en) 1979-08-09
JPS6149760B2 true JPS6149760B2 (en)van) 1986-10-30

Family

ID=11680476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP797678A Granted JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Country Status (1)

Country Link
JP (1) JPS54101230A (en)van)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JPS5823388A (ja) * 1981-08-05 1983-02-12 Nec Corp メモリ装置
JPS63166090A (ja) * 1986-12-26 1988-07-09 Toshiba Corp スタティック型メモリ
JP4901211B2 (ja) * 2005-12-26 2012-03-21 株式会社東芝 センスアンプ及び半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1523752A (en) * 1974-08-28 1978-09-06 Siemens Ag Dynamic semiconductor data stores
JPS5221733A (en) * 1975-08-11 1977-02-18 Nippon Telegr & Teleph Corp <Ntt> Microsignal detection circuit
JPS52152129A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Memory signal detection-amplification unit

Also Published As

Publication number Publication date
JPS54101230A (en) 1979-08-09

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