JPS52152129A - Memory signal detection-amplification unit - Google Patents

Memory signal detection-amplification unit

Info

Publication number
JPS52152129A
JPS52152129A JP6957776A JP6957776A JPS52152129A JP S52152129 A JPS52152129 A JP S52152129A JP 6957776 A JP6957776 A JP 6957776A JP 6957776 A JP6957776 A JP 6957776A JP S52152129 A JPS52152129 A JP S52152129A
Authority
JP
Japan
Prior art keywords
signal detection
amplification unit
memory signal
power supply
eliminates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6957776A
Other languages
Japanese (ja)
Inventor
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6957776A priority Critical patent/JPS52152129A/en
Publication of JPS52152129A publication Critical patent/JPS52152129A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:Voltage level adjusting capacity element Z is provided, thereby obtaining the extremely miniaturized and simplified memory signal detection-amplification unit which does not require two power supply terminals and eliminates the need for many wirings up to the power supply terminal.
JP6957776A 1976-06-14 1976-06-14 Memory signal detection-amplification unit Pending JPS52152129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6957776A JPS52152129A (en) 1976-06-14 1976-06-14 Memory signal detection-amplification unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6957776A JPS52152129A (en) 1976-06-14 1976-06-14 Memory signal detection-amplification unit

Publications (1)

Publication Number Publication Date
JPS52152129A true JPS52152129A (en) 1977-12-17

Family

ID=13406777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6957776A Pending JPS52152129A (en) 1976-06-14 1976-06-14 Memory signal detection-amplification unit

Country Status (1)

Country Link
JP (1) JPS52152129A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101230A (en) * 1978-01-26 1979-08-09 Nec Corp Dynamic mos memory circuit
JPS5771579A (en) * 1980-10-22 1982-05-04 Fujitsu Ltd Semiconductor memory device
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS61113187A (en) * 1984-07-11 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor memory
EP0189908A2 (en) * 1985-01-30 1986-08-06 Nec Corporation Dynamic memory with improved arrangement for precharging bit lines
JPS61180996A (en) * 1986-02-07 1986-08-13 Nec Corp Dynamic mos memory device
EP0223621A2 (en) * 1985-10-08 1987-05-27 Fujitsu Limited Semiconductor memory device having a circuit for compensating for discriminating voltage variations of a memory cell
JPS63183686A (en) * 1987-01-26 1988-07-29 Nec Corp Digit line balance level correcting method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110931A (en) * 1975-03-05 1976-09-30 Teletype Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110931A (en) * 1975-03-05 1976-09-30 Teletype Corp

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54101230A (en) * 1978-01-26 1979-08-09 Nec Corp Dynamic mos memory circuit
JPS6149760B2 (en) * 1978-01-26 1986-10-30 Nippon Electric Co
JPS5771579A (en) * 1980-10-22 1982-05-04 Fujitsu Ltd Semiconductor memory device
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS61113187A (en) * 1984-07-11 1986-05-31 テキサス　インスツルメンツ　インコ−ポレイテツド Semiconductor memory
JPH0587916B2 (en) * 1984-07-11 1993-12-20 Texas Instruments Inc
EP0189908A2 (en) * 1985-01-30 1986-08-06 Nec Corporation Dynamic memory with improved arrangement for precharging bit lines
JPS6231092A (en) * 1985-01-30 1987-02-10 Nec Corp Memory circuit
EP0223621A2 (en) * 1985-10-08 1987-05-27 Fujitsu Limited Semiconductor memory device having a circuit for compensating for discriminating voltage variations of a memory cell
JPS61180996A (en) * 1986-02-07 1986-08-13 Nec Corp Dynamic mos memory device
JPS63183686A (en) * 1987-01-26 1988-07-29 Nec Corp Digit line balance level correcting method

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