JPS6146964B2 - - Google Patents

Info

Publication number
JPS6146964B2
JPS6146964B2 JP53165820A JP16582078A JPS6146964B2 JP S6146964 B2 JPS6146964 B2 JP S6146964B2 JP 53165820 A JP53165820 A JP 53165820A JP 16582078 A JP16582078 A JP 16582078A JP S6146964 B2 JPS6146964 B2 JP S6146964B2
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor substrate
film
semiconductor
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53165820A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5593268A (en
Inventor
Motoo Nakano
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16582078A priority Critical patent/JPS5593268A/ja
Publication of JPS5593268A publication Critical patent/JPS5593268A/ja
Publication of JPS6146964B2 publication Critical patent/JPS6146964B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP16582078A 1978-12-30 1978-12-30 Manufacture of semiconductor device Granted JPS5593268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16582078A JPS5593268A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16582078A JPS5593268A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5593268A JPS5593268A (en) 1980-07-15
JPS6146964B2 true JPS6146964B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=15819608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16582078A Granted JPS5593268A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593268A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62232123A (ja) * 1986-03-31 1987-10-12 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01134916A (ja) * 1987-11-19 1989-05-26 Nec Yamagata Ltd 半導体装置の製造方法
JPH01259529A (ja) * 1988-04-09 1989-10-17 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS5593268A (en) 1980-07-15

Similar Documents

Publication Publication Date Title
US4366613A (en) Method of fabricating an MOS dynamic RAM with lightly doped drain
US6518623B1 (en) Semiconductor device having a buried-channel MOS structure
US4342149A (en) Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation
US5028564A (en) Edge doping processes for mesa structures in SOS and SOI devices
JPS63314868A (ja) Ｍｏｓ半導体装置の製造方法
KR980006510A (ko) 반도체 장치의 제조방법
US3986896A (en) Method of manufacturing semiconductor devices
KR100236101B1 (ko) 반도체 소자 및 제조 방법
JPS62130558A (ja) 集積回路装置の製法
US4751554A (en) Silicon-on-sapphire integrated circuit and method of making the same
JPS5947471B2 (ja) 絶縁ゲ−ト型電界効果半導体装置の製造方法
JPH0697297A (ja) コンタクトを有する半導体素子及びその製造方法
JPS6146964B2 (enrdf_load_stackoverflow)
US5334543A (en) Method of making reverse lightly doped drain (LDD) for buried N+ conductor
JP2707901B2 (ja) 半導体装置の製造方法
JPS62122174A (ja) 電界効果半導体装置および製造方法
JPS6193641A (ja) 半導体装置
JPH02143461A (ja) 半導体装置の製造方法
JPS6243341B2 (enrdf_load_stackoverflow)
KR100855283B1 (ko) 캐패시터 형성 방법
JPS5896732A (ja) イオン注入方法
JPH05267205A (ja) 半導体装置の製造方法
JPS6146963B2 (enrdf_load_stackoverflow)
JPH0695550B2 (ja) 半導体装置
JPH08340045A (ja) 半導体集積回路装置およびその製造方法