JPS6144866U - 半導体レ−ザ−・ダイオ−ド - Google Patents
半導体レ−ザ−・ダイオ−ドInfo
- Publication number
- JPS6144866U JPS6144866U JP1985116344U JP11634485U JPS6144866U JP S6144866 U JPS6144866 U JP S6144866U JP 1985116344 U JP1985116344 U JP 1985116344U JP 11634485 U JP11634485 U JP 11634485U JP S6144866 U JPS6144866 U JP S6144866U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- strip
- shaped
- laser diode
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims 1
- 239000003353 gold alloy Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
第2区は公知の半導体レーザー・ダイオードの断面図で
あり、第1図はこの考案による半導体レーザー・ダイオ
ードの斜視図である。 第1図において12は半導体基板、13乃至16はダイ
オードを稠成する半導体材料層、17と18は電極層で
ある。
あり、第1図はこの考案による半導体レーザー・ダイオ
ードの斜視図である。 第1図において12は半導体基板、13乃至16はダイ
オードを稠成する半導体材料層、17と18は電極層で
ある。
Claims (1)
- ・ 異種半導体接合を含む積層構造を備え、その第一層
16はpドープガリウム・ヒ素(GaAs)からなり両
側から狭められて帯状となり、それに続く第二層15は
pドープガリウム・アルミニウム・ヒ素(Ga1−XA
IXAs)から成り帯状の第一層の外にある両側部分は
その中央部分より薄くされ、最上部の電極層18は帯状
の第一層16命体と第二層15の両側部分151,15
2とを覆っている半導体レーザー・ダイオードにおいて
、最上部電極層18の材料としてクロム金合金が使用さ
れていること、第一層16のドーピング密度が少くとも
5×1α8cm−3であること、第二層15のトーヒン
グ密度は1σ8o−3以下であってそのAI比率Xが0
.25と0.6の間にあること、帯状の第一層16の外
側にある第二層15の部分151.152が約0.4μ
mの厚さになっていることを特徴とする半導体レーザー
・ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2856507.3 | 1978-12-28 | ||
DE19782856507 DE2856507A1 (de) | 1978-12-28 | 1978-12-28 | Halbleiter-laserdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6144866U true JPS6144866U (ja) | 1986-03-25 |
Family
ID=6058590
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17403979A Pending JPS5591189A (en) | 1978-12-28 | 1979-12-27 | Semiconductor laser diode and method of fabricating same |
JP1985116344U Pending JPS6144866U (ja) | 1978-12-28 | 1985-07-29 | 半導体レ−ザ−・ダイオ−ド |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17403979A Pending JPS5591189A (en) | 1978-12-28 | 1979-12-27 | Semiconductor laser diode and method of fabricating same |
Country Status (5)
Country | Link |
---|---|
US (1) | US4352187A (ja) |
JP (2) | JPS5591189A (ja) |
DE (1) | DE2856507A1 (ja) |
FR (1) | FR2445638B1 (ja) |
GB (1) | GB2038538B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2488049A1 (fr) * | 1980-07-31 | 1982-02-05 | Bouley Jean | Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication |
JPS5833885A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | レ−ザ−ダイオ−ド |
DE3234389C2 (de) * | 1982-09-16 | 1995-03-09 | Siemens Ag | Halbleiter-Laserdiode |
DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
USRE34378E (en) * | 1984-03-16 | 1993-09-14 | Hitachi, Ltd. | Light emitting device with improved electrode structure to minimize short circuiting |
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
US4615032A (en) * | 1984-07-13 | 1986-09-30 | At&T Bell Laboratories | Self-aligned rib-waveguide high power laser |
DE3437209A1 (de) * | 1984-10-10 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Verbesserung zu einem monomoden-diodenlaser |
DE3531734A1 (de) * | 1985-09-05 | 1987-03-12 | Siemens Ag | Einrichtung zur positionierung eines halbleiterlasers mit selbstjustierender wirkung fuer eine anzukoppelnde glasfaser |
DE3534744A1 (de) * | 1985-09-28 | 1987-04-09 | Standard Elektrik Lorenz Ag | Laservorrichtung mit stabilisierter ausgangsleistung |
EP0236713A3 (de) * | 1986-02-10 | 1988-06-29 | Siemens Aktiengesellschaft | Laserdiode |
EP0237812A3 (de) * | 1986-03-20 | 1988-06-29 | Siemens Aktiengesellschaft | Halbleiterlaser-Array mit gebündelter Abstrahlung |
DE3612695A1 (de) * | 1986-04-15 | 1987-10-22 | Siemens Ag | Halbleiter-laserdiode mit qualitativ verbesserter resonator-spiegelflaeche |
FR2606223B1 (fr) * | 1986-10-29 | 1996-03-01 | Seiko Epson Corp | Laser a semiconducteur et son procede de fabrication |
JPS63306689A (ja) * | 1987-05-22 | 1988-12-14 | シーメンス、アクチエンゲゼルシヤフト | 横結合レーザーダイオードアレー |
JPH0231487A (ja) * | 1988-07-20 | 1990-02-01 | Mitsubishi Electric Corp | 半導体レーザ装置とその製造方法 |
EP0383958B1 (de) * | 1989-02-15 | 1993-06-02 | Siemens Aktiengesellschaft | Abstimmbarer Halbleiterlaser |
NL8900748A (nl) * | 1989-03-28 | 1990-10-16 | Philips Nv | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
US6859277B2 (en) * | 2002-08-27 | 2005-02-22 | Particle Measuring Systems, Inc. | Particle counter with strip laser diode |
DE102004052857B4 (de) * | 2004-10-26 | 2006-09-07 | Forschungsverbund Berlin E.V. | Optisches Element und Verfahren zu dessen Herstellung |
DE102015116865A1 (de) | 2015-10-05 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5071281A (ja) * | 1973-10-26 | 1975-06-13 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286093A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Striped semiconductor laser |
US4206468A (en) * | 1976-05-11 | 1980-06-03 | Thomson-Csf | Contacting structure on a semiconductor arrangement |
FR2351504A1 (fr) * | 1976-05-11 | 1977-12-09 | Thomson Csf | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
JPH0571281A (ja) * | 1991-09-12 | 1993-03-23 | Naka Ind Ltd | 避難用梯子 |
-
1978
- 1978-12-28 DE DE19782856507 patent/DE2856507A1/de active Granted
-
1979
- 1979-12-18 GB GB7943609A patent/GB2038538B/en not_active Expired
- 1979-12-19 US US06/105,126 patent/US4352187A/en not_active Expired - Lifetime
- 1979-12-20 FR FR7931266A patent/FR2445638B1/fr not_active Expired
- 1979-12-27 JP JP17403979A patent/JPS5591189A/ja active Pending
-
1985
- 1985-07-29 JP JP1985116344U patent/JPS6144866U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5071281A (ja) * | 1973-10-26 | 1975-06-13 |
Also Published As
Publication number | Publication date |
---|---|
US4352187A (en) | 1982-09-28 |
JPS5591189A (en) | 1980-07-10 |
FR2445638B1 (fr) | 1986-02-21 |
FR2445638A1 (fr) | 1980-07-25 |
GB2038538B (en) | 1983-02-16 |
GB2038538A (en) | 1980-07-23 |
DE2856507A1 (de) | 1980-07-17 |
DE2856507C2 (ja) | 1989-03-30 |
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