JPS5591189A - Semiconductor laser diode and method of fabricating same - Google Patents
Semiconductor laser diode and method of fabricating sameInfo
- Publication number
- JPS5591189A JPS5591189A JP17403979A JP17403979A JPS5591189A JP S5591189 A JPS5591189 A JP S5591189A JP 17403979 A JP17403979 A JP 17403979A JP 17403979 A JP17403979 A JP 17403979A JP S5591189 A JPS5591189 A JP S5591189A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser diode
- fabricating same
- fabricating
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782856507 DE2856507A1 (de) | 1978-12-28 | 1978-12-28 | Halbleiter-laserdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5591189A true JPS5591189A (en) | 1980-07-10 |
Family
ID=6058590
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17403979A Pending JPS5591189A (en) | 1978-12-28 | 1979-12-27 | Semiconductor laser diode and method of fabricating same |
JP1985116344U Pending JPS6144866U (ja) | 1978-12-28 | 1985-07-29 | 半導体レ−ザ−・ダイオ−ド |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985116344U Pending JPS6144866U (ja) | 1978-12-28 | 1985-07-29 | 半導体レ−ザ−・ダイオ−ド |
Country Status (5)
Country | Link |
---|---|
US (1) | US4352187A (ja) |
JP (2) | JPS5591189A (ja) |
DE (1) | DE2856507A1 (ja) |
FR (1) | FR2445638B1 (ja) |
GB (1) | GB2038538B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5967684A (ja) * | 1982-09-16 | 1984-04-17 | シ−メンス・アクチエンゲゼルシヤフト | レ−ザ−・ダイオ−ド |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2488049A1 (fr) * | 1980-07-31 | 1982-02-05 | Bouley Jean | Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication |
JPS5833885A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | レ−ザ−ダイオ−ド |
DE3332398A1 (de) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Multimodenlaser |
USRE34378E (en) * | 1984-03-16 | 1993-09-14 | Hitachi, Ltd. | Light emitting device with improved electrode structure to minimize short circuiting |
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
US4615032A (en) * | 1984-07-13 | 1986-09-30 | At&T Bell Laboratories | Self-aligned rib-waveguide high power laser |
DE3437209A1 (de) * | 1984-10-10 | 1986-04-17 | Siemens AG, 1000 Berlin und 8000 München | Verbesserung zu einem monomoden-diodenlaser |
DE3531734A1 (de) * | 1985-09-05 | 1987-03-12 | Siemens Ag | Einrichtung zur positionierung eines halbleiterlasers mit selbstjustierender wirkung fuer eine anzukoppelnde glasfaser |
DE3534744A1 (de) * | 1985-09-28 | 1987-04-09 | Standard Elektrik Lorenz Ag | Laservorrichtung mit stabilisierter ausgangsleistung |
EP0236713A3 (de) * | 1986-02-10 | 1988-06-29 | Siemens Aktiengesellschaft | Laserdiode |
EP0237812A3 (de) * | 1986-03-20 | 1988-06-29 | Siemens Aktiengesellschaft | Halbleiterlaser-Array mit gebündelter Abstrahlung |
DE3612695A1 (de) * | 1986-04-15 | 1987-10-22 | Siemens Ag | Halbleiter-laserdiode mit qualitativ verbesserter resonator-spiegelflaeche |
FR2606223B1 (fr) * | 1986-10-29 | 1996-03-01 | Seiko Epson Corp | Laser a semiconducteur et son procede de fabrication |
JPS63306689A (ja) * | 1987-05-22 | 1988-12-14 | シーメンス、アクチエンゲゼルシヤフト | 横結合レーザーダイオードアレー |
JPH0231487A (ja) * | 1988-07-20 | 1990-02-01 | Mitsubishi Electric Corp | 半導体レーザ装置とその製造方法 |
EP0383958B1 (de) * | 1989-02-15 | 1993-06-02 | Siemens Aktiengesellschaft | Abstimmbarer Halbleiterlaser |
NL8900748A (nl) * | 1989-03-28 | 1990-10-16 | Philips Nv | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
US6859277B2 (en) * | 2002-08-27 | 2005-02-22 | Particle Measuring Systems, Inc. | Particle counter with strip laser diode |
DE102004052857B4 (de) * | 2004-10-26 | 2006-09-07 | Forschungsverbund Berlin E.V. | Optisches Element und Verfahren zu dessen Herstellung |
DE102015116865A1 (de) | 2015-10-05 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5071281A (ja) * | 1973-10-26 | 1975-06-13 | ||
JPS5286093A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Striped semiconductor laser |
US4206468A (en) * | 1976-05-11 | 1980-06-03 | Thomson-Csf | Contacting structure on a semiconductor arrangement |
FR2351504A1 (fr) * | 1976-05-11 | 1977-12-09 | Thomson Csf | Nouveau dispositif de prise de contact sur un ensemble semi-conducteur |
US4099305A (en) * | 1977-03-14 | 1978-07-11 | Bell Telephone Laboratories, Incorporated | Fabrication of mesa devices by MBE growth over channeled substrates |
US4169997A (en) * | 1977-05-06 | 1979-10-02 | Bell Telephone Laboratories, Incorporated | Lateral current confinement in junction lasers |
JPH0571281A (ja) * | 1991-09-12 | 1993-03-23 | Naka Ind Ltd | 避難用梯子 |
-
1978
- 1978-12-28 DE DE19782856507 patent/DE2856507A1/de active Granted
-
1979
- 1979-12-18 GB GB7943609A patent/GB2038538B/en not_active Expired
- 1979-12-19 US US06/105,126 patent/US4352187A/en not_active Expired - Lifetime
- 1979-12-20 FR FR7931266A patent/FR2445638B1/fr not_active Expired
- 1979-12-27 JP JP17403979A patent/JPS5591189A/ja active Pending
-
1985
- 1985-07-29 JP JP1985116344U patent/JPS6144866U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5967684A (ja) * | 1982-09-16 | 1984-04-17 | シ−メンス・アクチエンゲゼルシヤフト | レ−ザ−・ダイオ−ド |
Also Published As
Publication number | Publication date |
---|---|
US4352187A (en) | 1982-09-28 |
FR2445638B1 (fr) | 1986-02-21 |
FR2445638A1 (fr) | 1980-07-25 |
GB2038538B (en) | 1983-02-16 |
JPS6144866U (ja) | 1986-03-25 |
GB2038538A (en) | 1980-07-23 |
DE2856507A1 (de) | 1980-07-17 |
DE2856507C2 (ja) | 1989-03-30 |
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