JPH0446542U - - Google Patents
Info
- Publication number
- JPH0446542U JPH0446542U JP1990087943U JP8794390U JPH0446542U JP H0446542 U JPH0446542 U JP H0446542U JP 1990087943 U JP1990087943 U JP 1990087943U JP 8794390 U JP8794390 U JP 8794390U JP H0446542 U JPH0446542 U JP H0446542U
- Authority
- JP
- Japan
- Prior art keywords
- bump
- height
- semiconductor device
- insulating pillow
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1図は本考案の実施例を示す半導体装置のバ
ンプ形成工程断面図、第2図はその半導体装置の
平面図、第3図は従来の半導体装置におけるAu
バンプ形成工程断面図、第4図は本考案の第2実
施例を示す半導体装置のバンプの平面図、第5図
は本考案の第3実施例を示す半導体装置のバンプ
の平面図、第6図は本考案の第4実施例を示す半
導体装置のバンプの平面図である。 11……半導体基板、12,22,32,42
……絶縁性まくら、13、23、33,43……
電極、14,24,34,44……パツシベーシ
ヨン膜、15……バンプ電極。
ンプ形成工程断面図、第2図はその半導体装置の
平面図、第3図は従来の半導体装置におけるAu
バンプ形成工程断面図、第4図は本考案の第2実
施例を示す半導体装置のバンプの平面図、第5図
は本考案の第3実施例を示す半導体装置のバンプ
の平面図、第6図は本考案の第4実施例を示す半
導体装置のバンプの平面図である。 11……半導体基板、12,22,32,42
……絶縁性まくら、13、23、33,43……
電極、14,24,34,44……パツシベーシ
ヨン膜、15……バンプ電極。
Claims (1)
- 【実用新案登録請求の範囲】 (a) 半導体基板上に絶縁性まくらと、 (b) 該絶縁性まくらを覆うようにして形成され
た電極から成るバンプと、 (c) 該バンプの周りに形成されるパツシベーシ
ヨン膜と、 (d) 前記バンプの高さをパツシベーシヨン膜の
高さより僅かに高く形成することを特徴とする半
導体装置のバンプ電極構造。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990087943U JPH0446542U (ja) | 1990-08-24 | 1990-08-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990087943U JPH0446542U (ja) | 1990-08-24 | 1990-08-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0446542U true JPH0446542U (ja) | 1992-04-21 |
Family
ID=31820742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990087943U Pending JPH0446542U (ja) | 1990-08-24 | 1990-08-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0446542U (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303314A (ja) * | 2004-04-14 | 2005-10-27 | Samsung Electronics Co Ltd | バンプ構造を含む半導体素子及びその製造方法 |
-
1990
- 1990-08-24 JP JP1990087943U patent/JPH0446542U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005303314A (ja) * | 2004-04-14 | 2005-10-27 | Samsung Electronics Co Ltd | バンプ構造を含む半導体素子及びその製造方法 |