JPS63114065U - - Google Patents
Info
- Publication number
- JPS63114065U JPS63114065U JP570187U JP570187U JPS63114065U JP S63114065 U JPS63114065 U JP S63114065U JP 570187 U JP570187 U JP 570187U JP 570187 U JP570187 U JP 570187U JP S63114065 U JPS63114065 U JP S63114065U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding
- cladding layer
- semiconductor laser
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
第１図ａ〜ｃは本考案の実施例の製造工程を示
す工程別断面図、第２図は従来例を示す断面図で
ある。 １１……基板、１３，１４，１６，１７……第
１〜第４層、１５……活性層、１９……第１クラ
ツド層、２０……第２クラツド層、２２……リツ
ジ部。
す工程別断面図、第２図は従来例を示す断面図で
ある。 １１……基板、１３，１４，１６，１７……第
１〜第４層、１５……活性層、１９……第１クラ
ツド層、２０……第２クラツド層、２２……リツ
ジ部。
Claims (1)
- 【実用新案登録請求の範囲】 基板上に第１クラツド層、活性層及び第２クラ
ツド層を積層し、かつ上記第２クラツド層がリツ
ジ構造となる半導体レーザにおいて、 上記両クラツド層共に組成の異なる２層構造と
したことを特徴とする半導体レーザ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570187U JPS63114065U (ja) | 1987-01-19 | 1987-01-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570187U JPS63114065U (ja) | 1987-01-19 | 1987-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63114065U true JPS63114065U (ja) | 1988-07-22 |
Family
ID=30787532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP570187U Pending JPS63114065U (ja) | 1987-01-19 | 1987-01-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63114065U (ja) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834987A (ja) * | 1981-08-18 | 1983-03-01 | ゼロツクス・コ−ポレ−シヨン | 注入形レ−ザ |
| JPS6243193A (ja) * | 1985-08-20 | 1987-02-25 | Nec Corp | 半導体レ−ザ |
-
1987
- 1987-01-19 JP JP570187U patent/JPS63114065U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834987A (ja) * | 1981-08-18 | 1983-03-01 | ゼロツクス・コ−ポレ−シヨン | 注入形レ−ザ |
| JPS6243193A (ja) * | 1985-08-20 | 1987-02-25 | Nec Corp | 半導体レ−ザ |