JPS6144454A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6144454A
JPS6144454A JP59166823A JP16682384A JPS6144454A JP S6144454 A JPS6144454 A JP S6144454A JP 59166823 A JP59166823 A JP 59166823A JP 16682384 A JP16682384 A JP 16682384A JP S6144454 A JPS6144454 A JP S6144454A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
input
resistor
semiconductor substrate
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59166823A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0345904B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takehide Shirato
猛英 白土
Shinichi Sekine
真一 関根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59166823A priority Critical patent/JPS6144454A/ja
Priority to EP85109325A priority patent/EP0177692B1/en
Priority to DE8585109325T priority patent/DE3581254D1/de
Priority to US06/760,368 priority patent/US4710791A/en
Publication of JPS6144454A publication Critical patent/JPS6144454A/ja
Publication of JPH0345904B2 publication Critical patent/JPH0345904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59166823A 1984-08-09 1984-08-09 半導体装置 Granted JPS6144454A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59166823A JPS6144454A (ja) 1984-08-09 1984-08-09 半導体装置
EP85109325A EP0177692B1 (en) 1984-08-09 1985-07-26 Protection device in an integrated circuit
DE8585109325T DE3581254D1 (de) 1984-08-09 1985-07-26 Schutzvorrichtung in einer integrierten schaltung.
US06/760,368 US4710791A (en) 1984-08-09 1985-07-30 Protection device in an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59166823A JPS6144454A (ja) 1984-08-09 1984-08-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS6144454A true JPS6144454A (ja) 1986-03-04
JPH0345904B2 JPH0345904B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-07-12

Family

ID=15838324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59166823A Granted JPS6144454A (ja) 1984-08-09 1984-08-09 半導体装置

Country Status (4)

Country Link
US (1) US4710791A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0177692B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6144454A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3581254D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256665A (ja) * 1985-05-09 1986-11-14 Nec Corp 半導体集積回路の入力保護装置
JPS62155548A (ja) * 1985-12-27 1987-07-10 Nec Corp 半導体集積回路の静電保護回路素子
JPS62293664A (ja) * 1986-06-12 1987-12-21 Fujitsu Ltd Ｍｏｓ型集積回路の保護回路
JPH01286459A (ja) * 1988-05-13 1989-11-17 Nec Corp 半導体集積回路の保護装置
JPH01304763A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体集積回路装置
JPH02278734A (ja) * 1989-04-19 1990-11-15 Sanyo Electric Co Ltd 半導体集積回路装置
JPH05183108A (ja) * 1992-01-06 1993-07-23 Nec Ic Microcomput Syst Ltd 半導体装置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
JP2665223B2 (ja) * 1987-08-25 1997-10-22 シャープ株式会社 半導体集積回路装置
US4835416A (en) * 1987-08-31 1989-05-30 National Semiconductor Corporation VDD load dump protection circuit
US4958213A (en) * 1987-12-07 1990-09-18 Texas Instruments Incorporated Method for forming a transistor base region under thick oxide
KR910007374B1 (ko) * 1988-07-11 1991-09-25 삼성전자 주식회사 반도체소자의 입력단 지연시간 개선용 입력보호장치
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
US4876620A (en) * 1988-09-29 1989-10-24 Northern Telecom Limited Protection devices and arrangements for telephone lines
US4896243A (en) * 1988-12-20 1990-01-23 Texas Instruments Incorporated Efficient ESD input protection scheme
US5171702A (en) * 1989-07-21 1992-12-15 Texas Instruments Incorporated Method for forming a thick base oxide in a BiCMOS process
US5066999A (en) * 1989-10-23 1991-11-19 Micron Technology, Inc. Resistor under wirebond pad
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
US5013671A (en) * 1990-06-20 1991-05-07 Texas Instruments Incorporated Process for reduced emitter-base capacitance in bipolar transistor
EP0535536B1 (en) * 1991-09-30 2001-12-05 Texas Instruments Incorporated Depletion controlled isolation stage
DE4217408C1 (de) * 1992-05-26 1993-11-25 Texas Instruments Deutschland Integrierter Spannungsteiler
US5831317A (en) * 1993-05-25 1998-11-03 Matsushita Electronics Corporation Semiconductor device and manufacture thereof
KR0137972B1 (ko) * 1994-11-21 1998-04-28 김주용 반도체 소자의 신호 입력장치
EP0794570A1 (en) * 1996-03-06 1997-09-10 STMicroelectronics S.r.l. Integrated device with pads
JP3719618B2 (ja) * 1996-06-17 2005-11-24 松下電器産業株式会社 半導体装置及びその製造方法
JPH11261010A (ja) * 1998-03-13 1999-09-24 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3116916B2 (ja) * 1998-08-17 2000-12-11 日本電気株式会社 回路装置、その製造方法
US6100564A (en) * 1998-09-30 2000-08-08 International Business Machines Corporation SOI pass-gate disturb solution
US5977610A (en) * 1998-10-21 1999-11-02 National Semniconductor Corporation Integrated circuit having resistor formed over multiple tubs of semiconductor material
SE9900439D0 (sv) 1999-02-09 1999-02-09 Ericsson Telefon Ab L M Electrostatic discharge protection of integrated circuits
SE522909C2 (sv) * 2001-09-06 2004-03-16 Ericsson Telefon Ab L M Anordning för skydd av integrerad högfrekvenskrets innefattande en halvledarvaristor
US6483168B1 (en) 2001-09-13 2002-11-19 National Semiconductor Corporation Integrated circuit having resistor formed over emitter of vertical bipolar transistor
US20040105202A1 (en) * 2002-12-03 2004-06-03 Industrial Technology Research Institute Electrostatic discharge protection device and method using depletion switch
SE0302296D0 (sv) * 2003-08-27 2003-08-27 Infineon Technologies Ag Device for ESD protection of an integrated circuit
EP1603162A1 (en) * 2004-05-28 2005-12-07 Infineon Technologies AG Device for esd protection of an integrated circuit
US7242074B2 (en) * 2004-12-06 2007-07-10 Lsi Corporation Reduced capacitance resistors
US8269312B2 (en) * 2008-06-05 2012-09-18 Rohm Co., Ltd. Semiconductor device with resistive element
US8531263B2 (en) * 2009-11-24 2013-09-10 Littelfuse, Inc. Circuit protection device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127684A (en) * 1978-03-27 1979-10-03 Nec Corp Semiconductor device
JPS5599776A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Variable resistance semiconductor device
JPS56110251A (en) * 1980-02-04 1981-09-01 Hitachi Ltd High withsand voltage semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167804A (en) * 1976-12-13 1979-09-18 General Motors Corporation Integrated circuit process compatible surge protection resistor
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
JPS54101283A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Gate protective device
US4189739A (en) * 1978-03-08 1980-02-19 Bell Telephone Laboratories, Incorporated Semiconductor overload protection structure
JPS57130468A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Insulating gate protecting semiconductor device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
JPS58123768A (ja) * 1982-01-18 1983-07-23 Toshiba Corp 入力保護装置
JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
JPS59104171A (ja) * 1982-12-06 1984-06-15 Seiko Epson Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127684A (en) * 1978-03-27 1979-10-03 Nec Corp Semiconductor device
JPS5599776A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Variable resistance semiconductor device
JPS56110251A (en) * 1980-02-04 1981-09-01 Hitachi Ltd High withsand voltage semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256665A (ja) * 1985-05-09 1986-11-14 Nec Corp 半導体集積回路の入力保護装置
JPS62155548A (ja) * 1985-12-27 1987-07-10 Nec Corp 半導体集積回路の静電保護回路素子
JPS62293664A (ja) * 1986-06-12 1987-12-21 Fujitsu Ltd Ｍｏｓ型集積回路の保護回路
JPH01286459A (ja) * 1988-05-13 1989-11-17 Nec Corp 半導体集積回路の保護装置
JPH01304763A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体集積回路装置
JPH02278734A (ja) * 1989-04-19 1990-11-15 Sanyo Electric Co Ltd 半導体集積回路装置
JPH05183108A (ja) * 1992-01-06 1993-07-23 Nec Ic Microcomput Syst Ltd 半導体装置

Also Published As

Publication number Publication date
US4710791A (en) 1987-12-01
EP0177692A2 (en) 1986-04-16
EP0177692A3 (en) 1987-05-20
JPH0345904B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-07-12
EP0177692B1 (en) 1991-01-09
DE3581254D1 (de) 1991-02-14

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