JPS6143864B2 - - Google Patents
Info
- Publication number
- JPS6143864B2 JPS6143864B2 JP52065455A JP6545577A JPS6143864B2 JP S6143864 B2 JPS6143864 B2 JP S6143864B2 JP 52065455 A JP52065455 A JP 52065455A JP 6545577 A JP6545577 A JP 6545577A JP S6143864 B2 JPS6143864 B2 JP S6143864B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor
- drain
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 239000012212 insulator Substances 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6545577A JPS54881A (en) | 1977-06-03 | 1977-06-03 | Semiconductor device |
| GB24695/78A GB1604786A (en) | 1977-06-03 | 1978-05-31 | Semiconductor device and process for producing the same |
| NLAANVRAGE7806006,A NL186664C (nl) | 1977-06-03 | 1978-06-02 | Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. |
| DE2824419A DE2824419C2 (de) | 1977-06-03 | 1978-06-03 | Feldeffekttransistor und Verfahren zu dessen Herstellung |
| US05/912,736 US4251828A (en) | 1977-06-03 | 1978-06-05 | Semiconductor device and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6545577A JPS54881A (en) | 1977-06-03 | 1977-06-03 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54881A JPS54881A (en) | 1979-01-06 |
| JPS6143864B2 true JPS6143864B2 (ko) | 1986-09-30 |
Family
ID=13287619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6545577A Granted JPS54881A (en) | 1977-06-03 | 1977-06-03 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4251828A (ko) |
| JP (1) | JPS54881A (ko) |
| DE (1) | DE2824419C2 (ko) |
| GB (1) | GB1604786A (ko) |
| NL (1) | NL186664C (ko) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4353085A (en) * | 1978-02-27 | 1982-10-05 | Fujitsu Limited | Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film |
| JPS54154977A (en) * | 1978-05-29 | 1979-12-06 | Fujitsu Ltd | Semiconductor device and its manufacture |
| DE2967388D1 (en) * | 1978-09-20 | 1985-03-28 | Fujitsu Ltd | Semiconductor memory device and process for fabricating the device |
| JPS5847862B2 (ja) * | 1979-08-30 | 1983-10-25 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
| NL8006339A (nl) * | 1979-11-21 | 1981-06-16 | Hitachi Ltd | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
| JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
| JPS5836506B2 (ja) * | 1980-11-20 | 1983-08-09 | 富士通株式会社 | 半導体記憶装置 |
| EP0126292B1 (en) * | 1983-04-21 | 1987-12-02 | Kabushiki Kaisha Toshiba | Semiconductor device having an element isolation layer and method of manufacturing the same |
| JPS59220972A (ja) * | 1983-05-30 | 1984-12-12 | Mitsubishi Electric Corp | Ｍｏｓ形半導体装置およびその製造方法 |
| US4764799A (en) * | 1985-05-28 | 1988-08-16 | International Business Machines Corporation | Stud-defined integrated circuit structure |
| GB2185851A (en) * | 1986-01-25 | 1987-07-29 | Plessey Co Plc | Method of fabricating an mos transistor |
| JPS62202559A (ja) * | 1986-02-07 | 1987-09-07 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH0685427B2 (ja) * | 1986-03-13 | 1994-10-26 | 三菱電機株式会社 | 半導体記憶装置 |
| US4885617A (en) * | 1986-11-18 | 1989-12-05 | Siemens Aktiengesellschaft | Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit |
| US4923824A (en) * | 1988-04-27 | 1990-05-08 | Vtc Incorporated | Simplified method of fabricating lightly doped drain insulated gate field effect transistors |
| WO1991001569A1 (en) * | 1989-07-14 | 1991-02-07 | Seiko Instruments Inc. | Semiconductor device and method of producing the same |
| JP2891325B2 (ja) * | 1994-09-01 | 1999-05-17 | 日本電気株式会社 | Ｓｏｉ型半導体装置およびその製造方法 |
| EP0849804A3 (en) * | 1996-12-19 | 1999-08-25 | Texas Instruments Incorporated | Improvements in or relating to field effect transistors |
| DE19812643C1 (de) * | 1998-03-23 | 1999-07-08 | Siemens Ag | Schaltungsstruktur mit einem MOS-Transistor und Verfahren zu deren Herstellung |
| US8258057B2 (en) * | 2006-03-30 | 2012-09-04 | Intel Corporation | Copper-filled trench contact for transistor performance improvement |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49112574A (ko) * | 1973-02-24 | 1974-10-26 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
| US4041518A (en) * | 1973-02-24 | 1977-08-09 | Hitachi, Ltd. | MIS semiconductor device and method of manufacturing the same |
-
1977
- 1977-06-03 JP JP6545577A patent/JPS54881A/ja active Granted
-
1978
- 1978-05-31 GB GB24695/78A patent/GB1604786A/en not_active Expired
- 1978-06-02 NL NLAANVRAGE7806006,A patent/NL186664C/xx not_active IP Right Cessation
- 1978-06-03 DE DE2824419A patent/DE2824419C2/de not_active Expired
- 1978-06-05 US US05/912,736 patent/US4251828A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49112574A (ko) * | 1973-02-24 | 1974-10-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1604786A (en) | 1981-12-16 |
| JPS54881A (en) | 1979-01-06 |
| US4251828A (en) | 1981-02-17 |
| DE2824419C2 (de) | 1983-12-01 |
| NL186664C (nl) | 1991-01-16 |
| DE2824419A1 (de) | 1978-12-07 |
| NL7806006A (nl) | 1978-12-05 |
| NL186664B (nl) | 1990-08-16 |
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