NL186664C - Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. - Google Patents

Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan.

Info

Publication number
NL186664C
NL186664C NLAANVRAGE7806006,A NL7806006A NL186664C NL 186664 C NL186664 C NL 186664C NL 7806006 A NL7806006 A NL 7806006A NL 186664 C NL186664 C NL 186664C
Authority
NL
Netherlands
Prior art keywords
making
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE7806006,A
Other languages
English (en)
Other versions
NL186664B (nl
NL7806006A (nl
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of NL7806006A publication Critical patent/NL7806006A/nl
Publication of NL186664B publication Critical patent/NL186664B/nl
Application granted granted Critical
Publication of NL186664C publication Critical patent/NL186664C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
NLAANVRAGE7806006,A 1977-06-03 1978-06-02 Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan. NL186664C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6545577A JPS54881A (en) 1977-06-03 1977-06-03 Semiconductor device

Publications (3)

Publication Number Publication Date
NL7806006A NL7806006A (nl) 1978-12-05
NL186664B NL186664B (nl) 1990-08-16
NL186664C true NL186664C (nl) 1991-01-16

Family

ID=13287619

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7806006,A NL186664C (nl) 1977-06-03 1978-06-02 Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan.

Country Status (5)

Country Link
US (1) US4251828A (nl)
JP (1) JPS54881A (nl)
DE (1) DE2824419C2 (nl)
GB (1) GB1604786A (nl)
NL (1) NL186664C (nl)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353085A (en) * 1978-02-27 1982-10-05 Fujitsu Limited Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
CA1144646A (en) * 1978-09-20 1983-04-12 Junji Sakurai Dynamic ram having buried capacitor and planar gate
JPS5847862B2 (ja) * 1979-08-30 1983-10-25 富士通株式会社 半導体記憶装置及びその製造方法
NL8006339A (nl) * 1979-11-21 1981-06-16 Hitachi Ltd Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
JPS5836506B2 (ja) * 1980-11-20 1983-08-09 富士通株式会社 半導体記憶装置
DE3467953D1 (en) * 1983-04-21 1988-01-14 Toshiba Kk Semiconductor device having an element isolation layer and method of manufacturing the same
JPS59220972A (ja) * 1983-05-30 1984-12-12 Mitsubishi Electric Corp Ｍｏｓ形半導体装置およびその製造方法
US4764799A (en) * 1985-05-28 1988-08-16 International Business Machines Corporation Stud-defined integrated circuit structure
GB2185851A (en) * 1986-01-25 1987-07-29 Plessey Co Plc Method of fabricating an mos transistor
JPS62202559A (ja) * 1986-02-07 1987-09-07 Fujitsu Ltd 半導体装置及びその製造方法
JPH0685427B2 (ja) * 1986-03-13 1994-10-26 三菱電機株式会社 半導体記憶装置
US4885617A (en) * 1986-11-18 1989-12-05 Siemens Aktiengesellschaft Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit
US4923824A (en) * 1988-04-27 1990-05-08 Vtc Incorporated Simplified method of fabricating lightly doped drain insulated gate field effect transistors
EP0436038A4 (en) * 1989-07-14 1991-09-04 Seiko Instruments & Electronics Ltd. Semiconductor device and method of producing the same
JP2891325B2 (ja) * 1994-09-01 1999-05-17 日本電気株式会社 Ｓｏｉ型半導体装置およびその製造方法
EP0849804A3 (en) * 1996-12-19 1999-08-25 Texas Instruments Incorporated Improvements in or relating to field effect transistors
DE19812643C1 (de) * 1998-03-23 1999-07-08 Siemens Ag Schaltungsstruktur mit einem MOS-Transistor und Verfahren zu deren Herstellung
US8258057B2 (en) * 2006-03-30 2012-09-04 Intel Corporation Copper-filled trench contact for transistor performance improvement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
JPS49112574A (nl) * 1973-02-24 1974-10-26

Also Published As

Publication number Publication date
JPS6143864B2 (nl) 1986-09-30
US4251828A (en) 1981-02-17
JPS54881A (en) 1979-01-06
NL186664B (nl) 1990-08-16
GB1604786A (en) 1981-12-16
DE2824419C2 (de) 1983-12-01
DE2824419A1 (de) 1978-12-07
NL7806006A (nl) 1978-12-05

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee

Effective date: 19960101