JPS6143441A - 半導体装置のテスト方法 - Google Patents
半導体装置のテスト方法Info
- Publication number
- JPS6143441A JPS6143441A JP59166709A JP16670984A JPS6143441A JP S6143441 A JPS6143441 A JP S6143441A JP 59166709 A JP59166709 A JP 59166709A JP 16670984 A JP16670984 A JP 16670984A JP S6143441 A JPS6143441 A JP S6143441A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- wafer
- circuit element
- parallel
- abnormal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 5
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000523 sample Substances 0.000 claims abstract description 18
- 230000002159 abnormal effect Effects 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59166709A JPS6143441A (ja) | 1984-08-07 | 1984-08-07 | 半導体装置のテスト方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59166709A JPS6143441A (ja) | 1984-08-07 | 1984-08-07 | 半導体装置のテスト方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6143441A true JPS6143441A (ja) | 1986-03-03 |
| JPH0262947B2 JPH0262947B2 (enrdf_load_stackoverflow) | 1990-12-27 |
Family
ID=15836304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59166709A Granted JPS6143441A (ja) | 1984-08-07 | 1984-08-07 | 半導体装置のテスト方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6143441A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015141985A (ja) * | 2014-01-28 | 2015-08-03 | 株式会社東芝 | 検査装置、及び検査方法 |
| JP2016025250A (ja) * | 2014-07-22 | 2016-02-08 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
-
1984
- 1984-08-07 JP JP59166709A patent/JPS6143441A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015141985A (ja) * | 2014-01-28 | 2015-08-03 | 株式会社東芝 | 検査装置、及び検査方法 |
| US10060967B2 (en) | 2014-01-28 | 2018-08-28 | Toshiba Memory Corporation | Testing apparatus and method for testing semiconductor chips |
| JP2016025250A (ja) * | 2014-07-22 | 2016-02-08 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| US9633901B2 (en) | 2014-07-22 | 2017-04-25 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0262947B2 (enrdf_load_stackoverflow) | 1990-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005005331A (ja) | 検査方法及び検査装置 | |
| US4814283A (en) | Simple automated discretionary bonding of multiple parallel elements | |
| CN115706073B (zh) | 半导体结构及其制造方法 | |
| US5543633A (en) | Process and structure for measuring the planarity degree of a dielectric layer in an integrated circuit and integrated circuit including means for performing said process | |
| JPS6143441A (ja) | 半導体装置のテスト方法 | |
| US20230048600A1 (en) | Semiconductor structure and method for manufacturing semiconductor structure | |
| JP2657315B2 (ja) | プローブカード | |
| JP2002141474A (ja) | プレーナ型半導体チップとそのテスト方法並びに半導体ウエハ | |
| JPS6118144A (ja) | 半導体デバイス測定装置 | |
| JPS60167344A (ja) | 半導体ウエ−ハの検査装置 | |
| KR100430419B1 (ko) | 반도체 소자의 전기적 특성 검사방법 | |
| JPS6148927A (ja) | 半導体装置 | |
| JPH0766263A (ja) | 多層金属配線の接触抵抗測定方法並びに半導体装置及び半導体ウェハ | |
| KR20000045895A (ko) | 테스트패턴 형성방법 | |
| KR100248207B1 (ko) | 반도체 소자의 테스트 패턴 | |
| JPS618939A (ja) | 半導体装置 | |
| JPH01225138A (ja) | 半導体集積回路装置の短絡モニタ | |
| JPH02297993A (ja) | 膜回路装置の製造方法 | |
| JPS61253847A (ja) | 高信頼度を有する半導体装置 | |
| JPS63152140A (ja) | 半導体集積回路装置 | |
| TW563220B (en) | Method for picking defected dielectric in semiconductor device | |
| JPS6222448A (ja) | Ｉｃの形成されたウエ−ハ | |
| JP2008159641A (ja) | 半導体基板および半導体装置の検査方法 | |
| KR20050055285A (ko) | 프로브 카드용 니들과 그 제조 방법 | |
| JPS62193137A (ja) | 半導体装置の製造方法 |