JPS6142861B2 - - Google Patents
Info
- Publication number
- JPS6142861B2 JPS6142861B2 JP8484077A JP8484077A JPS6142861B2 JP S6142861 B2 JPS6142861 B2 JP S6142861B2 JP 8484077 A JP8484077 A JP 8484077A JP 8484077 A JP8484077 A JP 8484077A JP S6142861 B2 JPS6142861 B2 JP S6142861B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon thin
- polycrystalline silicon
- thin film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 description 80
- 239000010408 film Substances 0.000 description 70
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 57
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8484077A JPS5419382A (en) | 1977-07-14 | 1977-07-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8484077A JPS5419382A (en) | 1977-07-14 | 1977-07-14 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5419382A JPS5419382A (en) | 1979-02-14 |
| JPS6142861B2 true JPS6142861B2 (enrdf_load_stackoverflow) | 1986-09-24 |
Family
ID=13841979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8484077A Granted JPS5419382A (en) | 1977-07-14 | 1977-07-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5419382A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183051A (en) * | 1981-05-06 | 1982-11-11 | Seiko Epson Corp | Wiring in semiconductor device |
| JPS5842257A (ja) * | 1981-09-07 | 1983-03-11 | Toshiba Corp | 半導体装置 |
| JPS63182838A (ja) * | 1987-01-26 | 1988-07-28 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
-
1977
- 1977-07-14 JP JP8484077A patent/JPS5419382A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5419382A (en) | 1979-02-14 |
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