JPS6141153B2 - - Google Patents

Info

Publication number
JPS6141153B2
JPS6141153B2 JP53159441A JP15944178A JPS6141153B2 JP S6141153 B2 JPS6141153 B2 JP S6141153B2 JP 53159441 A JP53159441 A JP 53159441A JP 15944178 A JP15944178 A JP 15944178A JP S6141153 B2 JPS6141153 B2 JP S6141153B2
Authority
JP
Japan
Prior art keywords
gate
region
junction
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53159441A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5585055A (en
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15944178A priority Critical patent/JPS5585055A/ja
Publication of JPS5585055A publication Critical patent/JPS5585055A/ja
Publication of JPS6141153B2 publication Critical patent/JPS6141153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP15944178A 1978-12-21 1978-12-21 Semiconductor device Granted JPS5585055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5585055A JPS5585055A (en) 1980-06-26
JPS6141153B2 true JPS6141153B2 (cg-RX-API-DMAC10.html) 1986-09-12

Family

ID=15693816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15944178A Granted JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585055A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4872176B2 (ja) * 2001-08-29 2012-02-08 株式会社デンソー 接合型ｆｅｔの駆動回路
JP2006279608A (ja) * 2005-03-29 2006-10-12 Epson Toyocom Corp 圧電発振器
JP2011217349A (ja) * 2010-03-19 2011-10-27 Panasonic Corp 水晶発振回路

Also Published As

Publication number Publication date
JPS5585055A (en) 1980-06-26

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