JPS61288473A - 光起電力装置 - Google Patents

光起電力装置

Info

Publication number
JPS61288473A
JPS61288473A JP60131285A JP13128585A JPS61288473A JP S61288473 A JPS61288473 A JP S61288473A JP 60131285 A JP60131285 A JP 60131285A JP 13128585 A JP13128585 A JP 13128585A JP S61288473 A JPS61288473 A JP S61288473A
Authority
JP
Japan
Prior art keywords
light
receiving surface
photovoltaic device
surface electrode
tco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60131285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328073B2 (enrdf_load_stackoverflow
Inventor
Kenji Murata
邑田　健治
Yasuo Kishi
岸　靖雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60131285A priority Critical patent/JPS61288473A/ja
Priority to US06/872,684 priority patent/US4732621A/en
Publication of JPS61288473A publication Critical patent/JPS61288473A/ja
Publication of JPH0328073B2 publication Critical patent/JPH0328073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP60131285A 1985-06-17 1985-06-17 光起電力装置 Granted JPS61288473A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60131285A JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置
US06/872,684 US4732621A (en) 1985-06-17 1986-06-10 Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131285A JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置

Publications (2)

Publication Number Publication Date
JPS61288473A true JPS61288473A (ja) 1986-12-18
JPH0328073B2 JPH0328073B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=15054375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131285A Granted JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置

Country Status (1)

Country Link
JP (1) JPS61288473A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0399477A (ja) * 1989-09-12 1991-04-24 Canon Inc 太陽電池
JP2862174B2 (ja) * 1987-05-22 1999-02-24 グラステツク・ソーラー・インコーポレーテツド 太陽電池用基板
US6362414B1 (en) 1999-05-31 2002-03-26 Kaneka Corporation Transparent layered product and glass article using the same
US6444898B1 (en) 1999-06-18 2002-09-03 Nippon Sheet Glass Co., Ltd. Transparent layered product and glass article using the same
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
US6498380B1 (en) 1999-06-18 2002-12-24 Nippon Sheet Glass Co., Ltd. Substrate for photoelectric conversion device, and photoelectric conversion device using the same
US7179527B2 (en) 2001-10-19 2007-02-20 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
JP2009531842A (ja) * 2006-03-30 2009-09-03 ユニヴェルスィテ ドゥ ヌシャテル 起伏のある透明導電層及びその製造方法
US7608294B2 (en) 2003-11-18 2009-10-27 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
WO2011161961A1 (ja) 2010-06-23 2011-12-29 Ｊｘ日鉱日石エネルギー株式会社 光電変換素子

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
CN109346556B (zh) * 2018-09-21 2020-02-21 中国科学院半导体研究所 一种光学粗糙且电学平坦型透明导电衬底的制备方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2862174B2 (ja) * 1987-05-22 1999-02-24 グラステツク・ソーラー・インコーポレーテツド 太陽電池用基板
JPH0399477A (ja) * 1989-09-12 1991-04-24 Canon Inc 太陽電池
US6362414B1 (en) 1999-05-31 2002-03-26 Kaneka Corporation Transparent layered product and glass article using the same
US6444898B1 (en) 1999-06-18 2002-09-03 Nippon Sheet Glass Co., Ltd. Transparent layered product and glass article using the same
US6498380B1 (en) 1999-06-18 2002-12-24 Nippon Sheet Glass Co., Ltd. Substrate for photoelectric conversion device, and photoelectric conversion device using the same
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
US7179527B2 (en) 2001-10-19 2007-02-20 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7364808B2 (en) 2001-10-19 2008-04-29 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7883789B2 (en) 2001-10-19 2011-02-08 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7608294B2 (en) 2003-11-18 2009-10-27 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
US7846562B2 (en) 2003-11-18 2010-12-07 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
JP2009531842A (ja) * 2006-03-30 2009-09-03 ユニヴェルスィテ ドゥ ヌシャテル 起伏のある透明導電層及びその製造方法
WO2011161961A1 (ja) 2010-06-23 2011-12-29 Ｊｘ日鉱日石エネルギー株式会社 光電変換素子
US8802971B2 (en) 2010-06-23 2014-08-12 Jx Nippon Oil & Energy Corporation Photoelectric conversion element

Also Published As

Publication number Publication date
JPH0328073B2 (enrdf_load_stackoverflow) 1991-04-17

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Legal Events

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EXPY Cancellation because of completion of term