JPH0328073B2 - - Google Patents

Info

Publication number
JPH0328073B2
JPH0328073B2 JP60131285A JP13128585A JPH0328073B2 JP H0328073 B2 JPH0328073 B2 JP H0328073B2 JP 60131285 A JP60131285 A JP 60131285A JP 13128585 A JP13128585 A JP 13128585A JP H0328073 B2 JPH0328073 B2 JP H0328073B2
Authority
JP
Japan
Prior art keywords
light
receiving surface
surface electrode
tco
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60131285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61288473A (ja
Inventor
Kenji Murata
Yasuo Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60131285A priority Critical patent/JPS61288473A/ja
Priority to US06/872,684 priority patent/US4732621A/en
Publication of JPS61288473A publication Critical patent/JPS61288473A/ja
Publication of JPH0328073B2 publication Critical patent/JPH0328073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP60131285A 1985-06-17 1985-06-17 光起電力装置 Granted JPS61288473A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60131285A JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置
US06/872,684 US4732621A (en) 1985-06-17 1986-06-10 Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131285A JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置

Publications (2)

Publication Number Publication Date
JPS61288473A JPS61288473A (ja) 1986-12-18
JPH0328073B2 true JPH0328073B2 (enrdf_load_stackoverflow) 1991-04-17

Family

ID=15054375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131285A Granted JPS61288473A (ja) 1985-06-17 1985-06-17 光起電力装置

Country Status (1)

Country Link
JP (1) JPS61288473A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043080A1 (en) * 2000-11-21 2002-05-30 Nippon Sheet Glass Co., Ltd. Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it
CN109346556A (zh) * 2018-09-21 2019-02-15 中国科学院半导体研究所 一种光学粗糙且电学平坦型透明导电衬底的制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808462A (en) * 1987-05-22 1989-02-28 Glasstech Solar, Inc. Solar cell substrate
JP2805353B2 (ja) * 1989-09-12 1998-09-30 キヤノン株式会社 太陽電池
JP4430194B2 (ja) 1999-05-31 2010-03-10 日本板硝子株式会社 透明積層体およびこれを用いたガラス物品
JP2001060708A (ja) 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 透明積層体およびこれを用いたガラス物品
JP2001060702A (ja) 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
JP2002352956A (ja) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp 薄膜型発光体及びその製造方法
JP4389585B2 (ja) 2001-10-19 2009-12-24 旭硝子株式会社 透明導電性酸化物膜付き基体および光電変換素子
JP4542039B2 (ja) 2003-11-18 2010-09-08 日本板硝子株式会社 透明導電膜付き透明基体とその製造方法、およびこの基体を含む光電変換素子
EP1840966A1 (fr) * 2006-03-30 2007-10-03 Universite De Neuchatel Couche conductrice transparente et texturée et son procédé de réalisation
WO2011161961A1 (ja) 2010-06-23 2011-12-29 Ｊｘ日鉱日石エネルギー株式会社 光電変換素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043080A1 (en) * 2000-11-21 2002-05-30 Nippon Sheet Glass Co., Ltd. Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it
CN109346556A (zh) * 2018-09-21 2019-02-15 中国科学院半导体研究所 一种光学粗糙且电学平坦型透明导电衬底的制备方法
CN109346556B (zh) * 2018-09-21 2020-02-21 中国科学院半导体研究所 一种光学粗糙且电学平坦型透明导电衬底的制备方法

Also Published As

Publication number Publication date
JPS61288473A (ja) 1986-12-18

Similar Documents

Publication Publication Date Title
CA1211826A (en) Realization of a thin film solar cell with a detached reflector
US4644091A (en) Photoelectric transducer
JP2504378B2 (ja) 太陽電池基板の製造方法
JP2908067B2 (ja) 太陽電池用基板および太陽電池
JP2738557B2 (ja) 多層構造太陽電池
US4818337A (en) Thin active-layer solar cell with multiple internal reflections
JP5868503B2 (ja) 太陽電池およびその製造方法
US4732621A (en) Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer
EP0102204A1 (en) An optically enhanced photovoltaic device
WO1999063600A1 (fr) Dispositif photoelectrique a couches minces et a base de silicium
JP3706835B2 (ja) 薄膜光電変換装置
JPS6155268B2 (enrdf_load_stackoverflow)
KR20030081662A (ko) 이중층 반사방지막이 형성된 태양전지
JPH0328073B2 (enrdf_load_stackoverflow)
JPH0793447B2 (ja) 光電変換素子
JP2000058892A (ja) シリコン系薄膜光電変換装置
KR101658534B1 (ko) 태양전지 및 그 제조방법
JP2000261011A (ja) シリコン系薄膜光電変換装置
JP2682658B2 (ja) 半導体装置
JPS61278171A (ja) 薄膜光電変換素子
JPH0418646B2 (enrdf_load_stackoverflow)
JP3196155B2 (ja) 光起電力装置
JPS62247574A (ja) 光起電力装置
JP3241234B2 (ja) 薄膜太陽電池およびその製造方法
JPS6288927A (ja) 色センサ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term