JPS61288473A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS61288473A
JPS61288473A JP13128585A JP13128585A JPS61288473A JP S61288473 A JPS61288473 A JP S61288473A JP 13128585 A JP13128585 A JP 13128585A JP 13128585 A JP13128585 A JP 13128585A JP S61288473 A JPS61288473 A JP S61288473A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
light
face
receiving
electrode
tco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13128585A
Other versions
JPH0328073B2 (en )
Inventor
Yasuo Kishi
Kenji Murata
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To prevent the reflection loss of the incident light and the specific resistance from increasing, and the light transmission factor and the close adhesive ability to keep in close contact with the supporting substrate from decreasing, and to improve the photoelectric converting efficiency, by employing a light receiving face electrode which is made of transparent conductive oxide (TCO) having a mean grain size of 500-2000Angstrom and which has an uneven face having height differences of about 1000-5000Angstrom at the side interfacing with the semiconductor light active layer and having intervals between the respective convexes of about 2000-10000Angstrom . CONSTITUTION:A TCO layer 5 having a mean grain size of about 500-2000Angstrom is coated on the approximately uniform insulating surface of a transparent supporting substrate 1 such as glass. Next, the TCO layer 5 is etched toward the supporting substrate 1 from the exposed face. The etching is stopped at the midway of the thickness, and thus the exposed face has fine uneveness appropriate for a light receiving face electrode 2 of a photovoltaic device. In this way, the light receiving face electrode 2 having triangle cone shaped uneven faces 2tex having height differences of about 1000-5000Angstrom and intervals between the respective convexes of about 2000-10000Angstrom can be formed.
JP13128585A 1985-06-17 1985-06-17 Expired - Lifetime JPH0328073B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13128585A JPH0328073B2 (en) 1985-06-17 1985-06-17

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13128585A JPH0328073B2 (en) 1985-06-17 1985-06-17
US06872684 US4732621A (en) 1985-06-17 1986-06-10 Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer

Publications (2)

Publication Number Publication Date
JPS61288473A true true JPS61288473A (en) 1986-12-18
JPH0328073B2 JPH0328073B2 (en) 1991-04-17

Family

ID=15054375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13128585A Expired - Lifetime JPH0328073B2 (en) 1985-06-17 1985-06-17

Country Status (1)

Country Link
JP (1) JPH0328073B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0399477A (en) * 1989-09-12 1991-04-24 Canon Inc Solar cell
JP2862174B2 (en) * 1987-05-22 1999-02-24 グラステツク・ソーラー・インコーポレーテツド Substrate for a solar battery
US6362414B1 (en) 1999-05-31 2002-03-26 Kaneka Corporation Transparent layered product and glass article using the same
US6444898B1 (en) 1999-06-18 2002-09-03 Nippon Sheet Glass Co., Ltd. Transparent layered product and glass article using the same
JP2002352956A (en) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp Thin-film light emitting substance and manufacturing method therefor
US6498380B1 (en) 1999-06-18 2002-12-24 Nippon Sheet Glass Co., Ltd. Substrate for photoelectric conversion device, and photoelectric conversion device using the same
US7179527B2 (en) 2001-10-19 2007-02-20 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
JP2009531842A (en) * 2006-03-30 2009-09-03 ユニヴェルスィテ ドゥ ヌシャテル Transparent conductive layer and a manufacturing method thereof undulating
US7608294B2 (en) 2003-11-18 2009-10-27 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
WO2011161961A1 (en) 2010-06-23 2011-12-29 Jx日鉱日石エネルギー株式会社 Photoelectric conversion element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229606B2 (en) * 2000-11-21 2009-02-25 日本板硝子株式会社 For a photoelectric conversion device substrate and a photoelectric conversion device comprising the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2862174B2 (en) * 1987-05-22 1999-02-24 グラステツク・ソーラー・インコーポレーテツド Substrate for a solar battery
JPH0399477A (en) * 1989-09-12 1991-04-24 Canon Inc Solar cell
US6362414B1 (en) 1999-05-31 2002-03-26 Kaneka Corporation Transparent layered product and glass article using the same
US6444898B1 (en) 1999-06-18 2002-09-03 Nippon Sheet Glass Co., Ltd. Transparent layered product and glass article using the same
US6498380B1 (en) 1999-06-18 2002-12-24 Nippon Sheet Glass Co., Ltd. Substrate for photoelectric conversion device, and photoelectric conversion device using the same
JP2002352956A (en) * 2001-03-23 2002-12-06 Mitsubishi Chemicals Corp Thin-film light emitting substance and manufacturing method therefor
US7883789B2 (en) 2001-10-19 2011-02-08 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7179527B2 (en) 2001-10-19 2007-02-20 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7364808B2 (en) 2001-10-19 2008-04-29 Asahi Glass Company, Limited Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element
US7608294B2 (en) 2003-11-18 2009-10-27 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
US7846562B2 (en) 2003-11-18 2010-12-07 Nippon Sheet Glass Company, Limited Transparent substrate with transparent conductive film, method of manufacturing the same, and photoelectric conversion element including the substrate
JP2009531842A (en) * 2006-03-30 2009-09-03 ユニヴェルスィテ ドゥ ヌシャテル Transparent conductive layer and a manufacturing method thereof undulating
WO2011161961A1 (en) 2010-06-23 2011-12-29 Jx日鉱日石エネルギー株式会社 Photoelectric conversion element
US8802971B2 (en) 2010-06-23 2014-08-12 Jx Nippon Oil & Energy Corporation Photoelectric conversion element

Also Published As

Publication number Publication date Type
JP1901041C (en) grant
JPH0328073B2 (en) 1991-04-17 grant

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term