JPS6128236B2 - - Google Patents
Info
- Publication number
- JPS6128236B2 JPS6128236B2 JP52023594A JP2359477A JPS6128236B2 JP S6128236 B2 JPS6128236 B2 JP S6128236B2 JP 52023594 A JP52023594 A JP 52023594A JP 2359477 A JP2359477 A JP 2359477A JP S6128236 B2 JPS6128236 B2 JP S6128236B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- diode
- circuit
- junction
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2359477A JPS53108776A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
US05/882,766 US4227203A (en) | 1977-03-04 | 1978-03-02 | Semiconductor device having a polycrystalline silicon diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2359477A JPS53108776A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53108776A JPS53108776A (en) | 1978-09-21 |
JPS6128236B2 true JPS6128236B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=12114903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2359477A Granted JPS53108776A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4227203A (enrdf_load_stackoverflow) |
JP (1) | JPS53108776A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54156489A (en) * | 1978-05-31 | 1979-12-10 | Oki Electric Ind Co Ltd | Semiconductor device and its manufacture |
NL7806989A (nl) * | 1978-06-29 | 1980-01-03 | Philips Nv | Geintegreerde schakeling. |
NL188721C (nl) * | 1978-12-22 | 1992-09-01 | Philips Nv | Halfgeleidergeheugenschakeling voor een statisch geheugen. |
JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
JPS577959A (en) * | 1980-06-19 | 1982-01-16 | Toshiba Corp | Semiconductor device |
JP3874919B2 (ja) * | 1998-02-27 | 2007-01-31 | 富士通株式会社 | 化合物半導体装置 |
DE69926002T2 (de) * | 1999-11-17 | 2006-05-11 | Freescale Semiconductor, Inc., Austin | Herstellungsverfahren für eine Diode zur Integration mit einem Halbleiterbauelement und Herstellungsverfahren für ein Transistor-Bauelement mit einer integrierten Diode |
US7244989B2 (en) * | 2005-06-02 | 2007-07-17 | Freescale Semiconductor, Inc. | Semiconductor device and method of manufacture |
KR100699865B1 (ko) * | 2005-09-28 | 2007-03-28 | 삼성전자주식회사 | 화학기계적 연마를 이용한 자기 정렬 콘택 패드 형성 방법 |
US9196753B2 (en) | 2011-04-19 | 2015-11-24 | Micron Technology, Inc. | Select devices including a semiconductive stack having a semiconductive material |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3443175A (en) * | 1967-03-22 | 1969-05-06 | Rca Corp | Pn-junction semiconductor with polycrystalline layer on one region |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
US3648128A (en) * | 1968-05-25 | 1972-03-07 | Sony Corp | An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions |
US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
US3904450A (en) * | 1974-04-26 | 1975-09-09 | Bell Telephone Labor Inc | Method of fabricating injection logic integrated circuits using oxide isolation |
-
1977
- 1977-03-04 JP JP2359477A patent/JPS53108776A/ja active Granted
-
1978
- 1978-03-02 US US05/882,766 patent/US4227203A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4227203A (en) | 1980-10-07 |
JPS53108776A (en) | 1978-09-21 |
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