JPS6155781B2 - - Google Patents

Info

Publication number
JPS6155781B2
JPS6155781B2 JP53007232A JP723278A JPS6155781B2 JP S6155781 B2 JPS6155781 B2 JP S6155781B2 JP 53007232 A JP53007232 A JP 53007232A JP 723278 A JP723278 A JP 723278A JP S6155781 B2 JPS6155781 B2 JP S6155781B2
Authority
JP
Japan
Prior art keywords
iil
type
collector
transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53007232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54101288A (en
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP723278A priority Critical patent/JPS54101288A/ja
Publication of JPS54101288A publication Critical patent/JPS54101288A/ja
Publication of JPS6155781B2 publication Critical patent/JPS6155781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP723278A 1978-01-27 1978-01-27 Shottky iil Granted JPS54101288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Publications (2)

Publication Number Publication Date
JPS54101288A JPS54101288A (en) 1979-08-09
JPS6155781B2 true JPS6155781B2 (enrdf_load_stackoverflow) 1986-11-29

Family

ID=11660240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP723278A Granted JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Country Status (1)

Country Link
JP (1) JPS54101288A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes

Also Published As

Publication number Publication date
JPS54101288A (en) 1979-08-09

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