JPS54101288A - Shottky iil - Google Patents

Shottky iil

Info

Publication number
JPS54101288A
JPS54101288A JP723278A JP723278A JPS54101288A JP S54101288 A JPS54101288 A JP S54101288A JP 723278 A JP723278 A JP 723278A JP 723278 A JP723278 A JP 723278A JP S54101288 A JPS54101288 A JP S54101288A
Authority
JP
Japan
Prior art keywords
iil
constituted
barrier diode
schottky barrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP723278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155781B2 (enrdf_load_stackoverflow
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP723278A priority Critical patent/JPS54101288A/ja
Publication of JPS54101288A publication Critical patent/JPS54101288A/ja
Publication of JPS6155781B2 publication Critical patent/JPS6155781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP723278A 1978-01-27 1978-01-27 Shottky iil Granted JPS54101288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP723278A JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Publications (2)

Publication Number Publication Date
JPS54101288A true JPS54101288A (en) 1979-08-09
JPS6155781B2 JPS6155781B2 (enrdf_load_stackoverflow) 1986-11-29

Family

ID=11660240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP723278A Granted JPS54101288A (en) 1978-01-27 1978-01-27 Shottky iil

Country Status (1)

Country Link
JP (1) JPS54101288A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes

Also Published As

Publication number Publication date
JPS6155781B2 (enrdf_load_stackoverflow) 1986-11-29

Similar Documents

Publication Publication Date Title
JPS645070A (en) Vertical insulated gate field effect transistor
JPS54101288A (en) Shottky iil
JPS55165669A (en) Bipolar-mos device
JPS5312289A (en) Production of semiconductor device
JPS5771164A (en) Semiconductor device
US3409482A (en) Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
JPS56108255A (en) Semiconductor integrated circuit
JPS567472A (en) Semiconductor device
JPS5413275A (en) Controlled rectifying element of semiconductor
JPS5339081A (en) Semiconductor device
JPS5654062A (en) Production of semiconductor device
JPS55165675A (en) Thyristor
JPS5538080A (en) Semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS5529175A (en) Planar type transistor
JPS57157567A (en) Vertical type p-n-p transistor
JPS6459956A (en) Heterostructure bipolar transistor and manufacture thereof
JPS5654063A (en) Semiconductor device
JPS5595356A (en) Semiconductor device
JPS57199236A (en) Manufacture of oxide film isolation semiconductor device
JPS57211278A (en) Semiconductor device
JPS5626480A (en) Semiconductor light emitting device and manufacturing process thereof
JPS6410668A (en) Npn type bipolar transistor
JPS57149769A (en) Manufacture of reverse direction operation npn transistor
JPS5624922A (en) Manufacture of semiconductor device