JPS61244060A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61244060A
JPS61244060A JP60085812A JP8581285A JPS61244060A JP S61244060 A JPS61244060 A JP S61244060A JP 60085812 A JP60085812 A JP 60085812A JP 8581285 A JP8581285 A JP 8581285A JP S61244060 A JPS61244060 A JP S61244060A
Authority
JP
Japan
Prior art keywords
region
type
transistor
epitaxial layer
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60085812A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528507B2 (enExample
Inventor
Tomooki Hara
原 友意
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60085812A priority Critical patent/JPS61244060A/ja
Publication of JPS61244060A publication Critical patent/JPS61244060A/ja
Publication of JPH0528507B2 publication Critical patent/JPH0528507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/658Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP60085812A 1985-04-22 1985-04-22 半導体装置 Granted JPS61244060A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60085812A JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60085812A JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS61244060A true JPS61244060A (ja) 1986-10-30
JPH0528507B2 JPH0528507B2 (enExample) 1993-04-26

Family

ID=13869273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60085812A Granted JPS61244060A (ja) 1985-04-22 1985-04-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61244060A (enExample)

Also Published As

Publication number Publication date
JPH0528507B2 (enExample) 1993-04-26

Similar Documents

Publication Publication Date Title
US4933737A (en) Polysilon contacts to IC mesas
JPH09129741A (ja) 半導体集積回路とその製造方法
US5031020A (en) Semiconductor device having two different active elements whose partial area is commonly used
JP2979554B2 (ja) 半導体装置の製造方法
JP3128808B2 (ja) 半導体装置
JPS61244060A (ja) 半導体装置
JPS61245573A (ja) 半導体装置
JPH0258865A (ja) 半導体装置
JPH09129763A (ja) 半導体集積回路
JPS6167255A (ja) 半導体装置の製造方法
JP2536616B2 (ja) 半導体装置
JP2532694B2 (ja) 半導体装置の製造方法
JP3150420B2 (ja) バイポーラ集積回路とその製造方法
JPH061814B2 (ja) 半導体装置
JP3135615B2 (ja) 半導体装置及びその製造方法
JPH0525233Y2 (enExample)
JPH079385Y2 (ja) 半導体集積回路装置
JPH04323832A (ja) 半導体装置およびその製造方法
JPS6348842A (ja) 半導体集積回路装置の製造方法
JPH02276271A (ja) バイポーラ・cmos半導体装置及びその製造方法
JPH03145771A (ja) 半導体装置
JPS6347965A (ja) 半導体集積回路
JPS61268036A (ja) 半導体装置
KR19990002164A (ko) 바이폴라 트랜지스터 및 그 제조 방법
JPS61269377A (ja) 半導体装置