JPS61216480A - 不揮発性半導体記憶装置の製造方法 - Google Patents

不揮発性半導体記憶装置の製造方法

Info

Publication number
JPS61216480A
JPS61216480A JP60057717A JP5771785A JPS61216480A JP S61216480 A JPS61216480 A JP S61216480A JP 60057717 A JP60057717 A JP 60057717A JP 5771785 A JP5771785 A JP 5771785A JP S61216480 A JPS61216480 A JP S61216480A
Authority
JP
Japan
Prior art keywords
silicon layer
layer
crystal silicon
single crystal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60057717A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0341987B2 (enExample
Inventor
Seiichi Mori
誠一 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60057717A priority Critical patent/JPS61216480A/ja
Publication of JPS61216480A publication Critical patent/JPS61216480A/ja
Publication of JPH0341987B2 publication Critical patent/JPH0341987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP60057717A 1985-03-22 1985-03-22 不揮発性半導体記憶装置の製造方法 Granted JPS61216480A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60057717A JPS61216480A (ja) 1985-03-22 1985-03-22 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60057717A JPS61216480A (ja) 1985-03-22 1985-03-22 不揮発性半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61216480A true JPS61216480A (ja) 1986-09-26
JPH0341987B2 JPH0341987B2 (enExample) 1991-06-25

Family

ID=13063694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60057717A Granted JPS61216480A (ja) 1985-03-22 1985-03-22 不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61216480A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224675A (ja) * 1985-05-01 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド 不揮発性メモリの製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961189A (ja) * 1982-09-15 1984-04-07 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン 高密度型ｅｐｒｏｍメモリ−・アレ−

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961189A (ja) * 1982-09-15 1984-04-07 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン 高密度型ｅｐｒｏｍメモリ−・アレ−

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224675A (ja) * 1985-05-01 1987-02-02 テキサス　インスツルメンツ　インコ−ポレイテツド 不揮発性メモリの製法

Also Published As

Publication number Publication date
JPH0341987B2 (enExample) 1991-06-25

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