JPS61216480A - 不揮発性半導体記憶装置の製造方法 - Google Patents
不揮発性半導体記憶装置の製造方法Info
- Publication number
- JPS61216480A JPS61216480A JP60057717A JP5771785A JPS61216480A JP S61216480 A JPS61216480 A JP S61216480A JP 60057717 A JP60057717 A JP 60057717A JP 5771785 A JP5771785 A JP 5771785A JP S61216480 A JPS61216480 A JP S61216480A
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- layer
- crystal silicon
- single crystal
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 238000000034 method Methods 0.000 description 9
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 8
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057717A JPS61216480A (ja) | 1985-03-22 | 1985-03-22 | 不揮発性半導体記憶装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057717A JPS61216480A (ja) | 1985-03-22 | 1985-03-22 | 不揮発性半導体記憶装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61216480A true JPS61216480A (ja) | 1986-09-26 |
| JPH0341987B2 JPH0341987B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-06-25 |
Family
ID=13063694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60057717A Granted JPS61216480A (ja) | 1985-03-22 | 1985-03-22 | 不揮発性半導体記憶装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61216480A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224675A (ja) * | 1985-05-01 | 1987-02-02 | テキサス インスツルメンツ インコ−ポレイテツド | 不揮発性メモリの製法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961189A (ja) * | 1982-09-15 | 1984-04-07 | ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン | 高密度型ｅｐｒｏｍメモリ−・アレ− |
-
1985
- 1985-03-22 JP JP60057717A patent/JPS61216480A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961189A (ja) * | 1982-09-15 | 1984-04-07 | ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン | 高密度型ｅｐｒｏｍメモリ−・アレ− |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224675A (ja) * | 1985-05-01 | 1987-02-02 | テキサス インスツルメンツ インコ−ポレイテツド | 不揮発性メモリの製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0341987B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-06-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |