JPS61216477A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61216477A
JPS61216477A JP60057815A JP5781585A JPS61216477A JP S61216477 A JPS61216477 A JP S61216477A JP 60057815 A JP60057815 A JP 60057815A JP 5781585 A JP5781585 A JP 5781585A JP S61216477 A JPS61216477 A JP S61216477A
Authority
JP
Japan
Prior art keywords
transistor
output
semiconductor device
output terminal
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60057815A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571145B2 (en, 2012
Inventor
Yoshitake Tsuruoka
鶴岡　義丈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60057815A priority Critical patent/JPS61216477A/ja
Publication of JPS61216477A publication Critical patent/JPS61216477A/ja
Publication of JPH0571145B2 publication Critical patent/JPH0571145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP60057815A 1985-03-22 1985-03-22 半導体装置 Granted JPS61216477A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60057815A JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60057815A JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS61216477A true JPS61216477A (ja) 1986-09-26
JPH0571145B2 JPH0571145B2 (en, 2012) 1993-10-06

Family

ID=13066412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60057815A Granted JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61216477A (en, 2012)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
US5239194A (en) * 1990-03-02 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having increased electrostatic breakdown voltage
US6507089B1 (en) 1999-06-16 2003-01-14 Nec Corporation Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device
US6525388B1 (en) 1999-11-11 2003-02-25 Nec Compound Semiconductor Devices, Ltd. Compound semiconductor device having diode connected between emitter and collector of bipolar transistor
JP2004304136A (ja) * 2003-04-01 2004-10-28 Oki Electric Ind Co Ltd 半導体装置
EP0948051A3 (en) * 1998-03-24 2006-04-05 NEC Electronics Corporation Semiconductor device having a protective circuit
EP1359620A3 (en) * 2002-04-24 2008-07-23 Texas Instruments Incorporated ESD Protection Of Noise Decoupling Capacitors
WO2014112294A1 (ja) * 2013-01-18 2014-07-24 セイコーインスツル株式会社 半導体装置
CN104919577A (zh) * 2013-01-18 2015-09-16 精工电子有限公司 半导体装置
CN105280690A (zh) * 2014-07-15 2016-01-27 瑞萨电子株式会社 半导体器件

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
US5239194A (en) * 1990-03-02 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having increased electrostatic breakdown voltage
EP0948051A3 (en) * 1998-03-24 2006-04-05 NEC Electronics Corporation Semiconductor device having a protective circuit
US6507089B1 (en) 1999-06-16 2003-01-14 Nec Corporation Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device
US6525388B1 (en) 1999-11-11 2003-02-25 Nec Compound Semiconductor Devices, Ltd. Compound semiconductor device having diode connected between emitter and collector of bipolar transistor
EP1359620A3 (en) * 2002-04-24 2008-07-23 Texas Instruments Incorporated ESD Protection Of Noise Decoupling Capacitors
JP2004304136A (ja) * 2003-04-01 2004-10-28 Oki Electric Ind Co Ltd 半導体装置
WO2014112294A1 (ja) * 2013-01-18 2014-07-24 セイコーインスツル株式会社 半導体装置
JP2014138145A (ja) * 2013-01-18 2014-07-28 Seiko Instruments Inc 半導体装置
CN104919577A (zh) * 2013-01-18 2015-09-16 精工电子有限公司 半导体装置
CN104937701A (zh) * 2013-01-18 2015-09-23 精工电子有限公司 半导体装置
CN105280690A (zh) * 2014-07-15 2016-01-27 瑞萨电子株式会社 半导体器件
CN112820770A (zh) * 2014-07-15 2021-05-18 瑞萨电子株式会社 半导体器件
CN105280690B (zh) * 2014-07-15 2021-09-28 瑞萨电子株式会社 半导体器件

Also Published As

Publication number Publication date
JPH0571145B2 (en, 2012) 1993-10-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term