JPS6121197B2 - - Google Patents

Info

Publication number
JPS6121197B2
JPS6121197B2 JP54121279A JP12127979A JPS6121197B2 JP S6121197 B2 JPS6121197 B2 JP S6121197B2 JP 54121279 A JP54121279 A JP 54121279A JP 12127979 A JP12127979 A JP 12127979A JP S6121197 B2 JPS6121197 B2 JP S6121197B2
Authority
JP
Japan
Prior art keywords
silicon carbide
layer
silicon
growth
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54121279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645897A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12127979A priority Critical patent/JPS5645897A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS5645897A publication Critical patent/JPS5645897A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6121197B2 publication Critical patent/JPS6121197B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP12127979A 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal Granted JPS5645897A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Publications (2)

Publication Number Publication Date
JPS5645897A JPS5645897A (en) 1981-04-25
JPS6121197B2 true JPS6121197B2 (enExample) 1986-05-26

Family

ID=14807313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12127979A Granted JPS5645897A (en) 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal

Country Status (1)

Country Link
JP (1) JPS5645897A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283014A (ja) * 1987-04-28 1988-11-18 Sharp Corp 炭化珪素半導体素子
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
FR2786208B1 (fr) * 1998-11-25 2001-02-09 Centre Nat Rech Scient Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre
DE112018001768B4 (de) * 2017-03-28 2024-12-12 Mitsubishi Electric Corporation Siliciumcarbid-substrat, verfahren zum herstellen eines siliciumcarbid-substrats und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung

Also Published As

Publication number Publication date
JPS5645897A (en) 1981-04-25

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