JPS6120517B2 - - Google Patents
Info
- Publication number
- JPS6120517B2 JPS6120517B2 JP54056130A JP5613079A JPS6120517B2 JP S6120517 B2 JPS6120517 B2 JP S6120517B2 JP 54056130 A JP54056130 A JP 54056130A JP 5613079 A JP5613079 A JP 5613079A JP S6120517 B2 JPS6120517 B2 JP S6120517B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- carbon
- thin plate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5613079A JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5613079A JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55149194A JPS55149194A (en) | 1980-11-20 |
| JPS6120517B2 true JPS6120517B2 (enExample) | 1986-05-22 |
Family
ID=13018484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5613079A Granted JPS55149194A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55149194A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0673113U (ja) * | 1993-03-24 | 1994-10-11 | 株式会社ララ | ゴルフ練習用化粧付着防止カバー |
-
1979
- 1979-05-07 JP JP5613079A patent/JPS55149194A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0673113U (ja) * | 1993-03-24 | 1994-10-11 | 株式会社ララ | ゴルフ練習用化粧付着防止カバー |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55149194A (en) | 1980-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4623425A (en) | Method of fabricating single-crystal substrates of silicon carbide | |
| US5248385A (en) | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| US10822718B2 (en) | Method for producing aluminum nitride single crystal substrate | |
| JP4733882B2 (ja) | 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料 | |
| WO2006137192A1 (ja) | 炭化ケイ素基板の表面再構成方法 | |
| CN115497815A (zh) | 碳化硅晶片、外延晶片和半导体器件 | |
| JPS5838399B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JP3728464B2 (ja) | 単結晶ダイヤモンド膜気相合成用基板の製造方法 | |
| JP2006117512A (ja) | 炭化珪素単結晶の製造方法とその方法によって成長した炭化珪素単結晶、単結晶インゴットおよび炭化珪素単結晶ウエーハ | |
| JPH06219898A (ja) | n型炭化珪素単結晶の製造方法 | |
| JPS6120514B2 (enExample) | ||
| JP3322740B2 (ja) | 半導体基板およびその製造方法 | |
| JP4662034B2 (ja) | 炭化珪素単結晶の製造方法 | |
| US3501356A (en) | Process for the epitaxial growth of silicon carbide | |
| JP2003137694A (ja) | 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法 | |
| JPS6152120B2 (enExample) | ||
| TWI776220B (zh) | 磊晶晶圓、晶圓及其製造方法 | |
| JPS6121197B2 (enExample) | ||
| JPS63283014A (ja) | 炭化珪素半導体素子 | |
| JPS6120519B2 (enExample) | ||
| JPS6152119B2 (enExample) | ||
| JPS6045159B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS6120518B2 (enExample) | ||
| JPS5838400B2 (ja) | 炭化珪素結晶層の製造方法 |