JPS6120514B2 - - Google Patents

Info

Publication number
JPS6120514B2
JPS6120514B2 JP54010200A JP1020079A JPS6120514B2 JP S6120514 B2 JPS6120514 B2 JP S6120514B2 JP 54010200 A JP54010200 A JP 54010200A JP 1020079 A JP1020079 A JP 1020079A JP S6120514 B2 JPS6120514 B2 JP S6120514B2
Authority
JP
Japan
Prior art keywords
silicon carbide
silicon
layer
substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54010200A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55104999A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1020079A priority Critical patent/JPS55104999A/ja
Publication of JPS55104999A publication Critical patent/JPS55104999A/ja
Publication of JPS6120514B2 publication Critical patent/JPS6120514B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1020079A 1979-01-29 1979-01-29 Production of silicon carbide crystal layer Granted JPS55104999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1020079A JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1020079A JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55104999A JPS55104999A (en) 1980-08-11
JPS6120514B2 true JPS6120514B2 (enExample) 1986-05-22

Family

ID=11743625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1020079A Granted JPS55104999A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55104999A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180111U (enExample) * 1985-04-27 1986-11-10
JPS61206614U (enExample) * 1985-06-14 1986-12-27

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162035A (ja) * 1982-03-23 1983-09-26 Hoxan Corp 多結晶シリコンウエハの製造方法
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS60140756A (ja) * 1983-12-27 1985-07-25 Sharp Corp 炭化珪素バイポ−ラトランジスタの製造方法
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
FR2833619A1 (fr) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Procede de fabrication de substrats semi-conducteurs cristallins
JP5120758B2 (ja) * 2008-10-08 2013-01-16 東海カーボン株式会社 炭化珪素単結晶の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61180111U (enExample) * 1985-04-27 1986-11-10
JPS61206614U (enExample) * 1985-06-14 1986-12-27

Also Published As

Publication number Publication date
JPS55104999A (en) 1980-08-11

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