JPS623117B2 - - Google Patents

Info

Publication number
JPS623117B2
JPS623117B2 JP54007834A JP783479A JPS623117B2 JP S623117 B2 JPS623117 B2 JP S623117B2 JP 54007834 A JP54007834 A JP 54007834A JP 783479 A JP783479 A JP 783479A JP S623117 B2 JPS623117 B2 JP S623117B2
Authority
JP
Japan
Prior art keywords
silicon
silicon carbide
layer
substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54007834A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55100299A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP783479A priority Critical patent/JPS55100299A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55100299A publication Critical patent/JPS55100299A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS623117B2 publication Critical patent/JPS623117B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP783479A 1979-01-25 1979-01-25 Production of silicon carbide crystal layer Granted JPS55100299A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP783479A JPS55100299A (en) 1979-01-25 1979-01-25 Production of silicon carbide crystal layer
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP783479A JPS55100299A (en) 1979-01-25 1979-01-25 Production of silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55100299A JPS55100299A (en) 1980-07-31
JPS623117B2 true JPS623117B2 (enExample) 1987-01-23

Family

ID=11676625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP783479A Granted JPS55100299A (en) 1979-01-25 1979-01-25 Production of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55100299A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136134U (ja) * 1984-02-17 1985-09-10 三洋電機株式会社 単結晶成長装置

Also Published As

Publication number Publication date
JPS55100299A (en) 1980-07-31

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