JPS61205619A - 耐熱性酸化亜鉛透明導電膜 - Google Patents
耐熱性酸化亜鉛透明導電膜Info
- Publication number
- JPS61205619A JPS61205619A JP60046782A JP4678285A JPS61205619A JP S61205619 A JPS61205619 A JP S61205619A JP 60046782 A JP60046782 A JP 60046782A JP 4678285 A JP4678285 A JP 4678285A JP S61205619 A JPS61205619 A JP S61205619A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- conductive film
- transparent conductive
- oxide transparent
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 3
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 60
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 150000004820 halides Chemical class 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 239000000306 component Substances 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002772 conduction electron Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Non-Insulated Conductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60046782A JPS61205619A (ja) | 1985-03-08 | 1985-03-08 | 耐熱性酸化亜鉛透明導電膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60046782A JPS61205619A (ja) | 1985-03-08 | 1985-03-08 | 耐熱性酸化亜鉛透明導電膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61205619A true JPS61205619A (ja) | 1986-09-11 |
| JPH0372011B2 JPH0372011B2 (enrdf_load_stackoverflow) | 1991-11-15 |
Family
ID=12756897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60046782A Granted JPS61205619A (ja) | 1985-03-08 | 1985-03-08 | 耐熱性酸化亜鉛透明導電膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61205619A (enrdf_load_stackoverflow) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6433811A (en) * | 1987-04-04 | 1989-02-03 | Gunze Kk | Transparent conductive film and its manufacture |
| JPH01201021A (ja) * | 1988-02-04 | 1989-08-14 | Bridgestone Corp | 熱線遮蔽材料及び熱線遮蔽ガラス |
| JPH01242417A (ja) * | 1988-03-25 | 1989-09-27 | Mitsubishi Metal Corp | 透明導電性酸化亜鉛膜の製造方法 |
| US5776353A (en) * | 1996-02-16 | 1998-07-07 | Advanced Minerals Corporation | Advanced composite filtration media |
| US5972527A (en) * | 1992-12-15 | 1999-10-26 | Idemitsu Kosan Co., Ltd. | Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material |
| WO2003022954A1 (en) * | 2001-09-10 | 2003-03-20 | Japan Represented By President Of Tokyo Institute Of Technology | Method for producing ultraviolet absorbing material |
| WO2007108266A1 (ja) | 2006-03-17 | 2007-09-27 | Nippon Mining & Metals Co., Ltd. | 酸化亜鉛系透明導電体及び同透明導電体形成用スパッタリングターゲット |
| JP2007280910A (ja) * | 2006-04-03 | 2007-10-25 | Ind Technol Res Inst | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜とその製造方法 |
| WO2008023482A1 (fr) | 2006-08-24 | 2008-02-28 | Nippon Mining & Metals Co., Ltd. | conducteur électrique transparent à base d'oxyde de zinc, cible de pulvérisation cathodique pour former le conducteur et processus de fabrication de la cible |
| JPWO2006090806A1 (ja) * | 2005-02-24 | 2008-07-24 | 積水化学工業株式会社 | ガリウム含有酸化亜鉛 |
| JP2009114538A (ja) * | 2007-10-19 | 2009-05-28 | Hakusui Tech Co Ltd | 酸化亜鉛系薄膜製造用のイオンプレーティング用ターゲット |
| JP2009132998A (ja) * | 2007-10-30 | 2009-06-18 | Mitsubishi Materials Corp | ＺｎＯスパッタリングターゲットとその製造方法 |
| JP2009132997A (ja) * | 2007-10-30 | 2009-06-18 | Mitsubishi Materials Corp | ＺｎＯ蒸着材とその製造方法 |
| US8197908B2 (en) | 2008-03-14 | 2012-06-12 | Hestia Tec, Llc | Method for preparing electrically conducting materials |
| JP2012144409A (ja) * | 2011-01-14 | 2012-08-02 | Tosoh Corp | 酸化物焼結体、それから成るターゲットおよび透明導電膜 |
| US8895427B2 (en) | 2008-09-04 | 2014-11-25 | Kaneka Corporation | Substrate having a transparent electrode and method for producing the same |
| JPWO2016092902A1 (ja) * | 2014-12-09 | 2017-09-21 | リンテック株式会社 | 透明導電膜及び透明導電膜の製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| KR20090045150A (ko) * | 2006-07-28 | 2009-05-07 | 가부시키가이샤 알박 | 투명 도전막의 성막 방법 |
| CN101522569B (zh) | 2006-10-06 | 2012-02-15 | 堺化学工业株式会社 | 超微粒氧化锌及其制造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5023918A (enrdf_load_stackoverflow) * | 1973-07-02 | 1975-03-14 | ||
| JPS515360A (ja) * | 1974-07-02 | 1976-01-17 | Yoshiaki Sakai | Horiesuterukeshobanno seizoho |
-
1985
- 1985-03-08 JP JP60046782A patent/JPS61205619A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5023918A (enrdf_load_stackoverflow) * | 1973-07-02 | 1975-03-14 | ||
| JPS515360A (ja) * | 1974-07-02 | 1976-01-17 | Yoshiaki Sakai | Horiesuterukeshobanno seizoho |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6433811A (en) * | 1987-04-04 | 1989-02-03 | Gunze Kk | Transparent conductive film and its manufacture |
| JPH01201021A (ja) * | 1988-02-04 | 1989-08-14 | Bridgestone Corp | 熱線遮蔽材料及び熱線遮蔽ガラス |
| JPH01242417A (ja) * | 1988-03-25 | 1989-09-27 | Mitsubishi Metal Corp | 透明導電性酸化亜鉛膜の製造方法 |
| US5972527A (en) * | 1992-12-15 | 1999-10-26 | Idemitsu Kosan Co., Ltd. | Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material |
| US5776353A (en) * | 1996-02-16 | 1998-07-07 | Advanced Minerals Corporation | Advanced composite filtration media |
| WO2003022954A1 (en) * | 2001-09-10 | 2003-03-20 | Japan Represented By President Of Tokyo Institute Of Technology | Method for producing ultraviolet absorbing material |
| JPWO2006090806A1 (ja) * | 2005-02-24 | 2008-07-24 | 積水化学工業株式会社 | ガリウム含有酸化亜鉛 |
| WO2007108266A1 (ja) | 2006-03-17 | 2007-09-27 | Nippon Mining & Metals Co., Ltd. | 酸化亜鉛系透明導電体及び同透明導電体形成用スパッタリングターゲット |
| JP2007280910A (ja) * | 2006-04-03 | 2007-10-25 | Ind Technol Res Inst | 金属ナノ粒子を含むアルミニウム添加亜鉛酸化物透明導電膜とその製造方法 |
| WO2008023482A1 (fr) | 2006-08-24 | 2008-02-28 | Nippon Mining & Metals Co., Ltd. | conducteur électrique transparent à base d'oxyde de zinc, cible de pulvérisation cathodique pour former le conducteur et processus de fabrication de la cible |
| JP2009114538A (ja) * | 2007-10-19 | 2009-05-28 | Hakusui Tech Co Ltd | 酸化亜鉛系薄膜製造用のイオンプレーティング用ターゲット |
| JP2009132998A (ja) * | 2007-10-30 | 2009-06-18 | Mitsubishi Materials Corp | ＺｎＯスパッタリングターゲットとその製造方法 |
| JP2009132997A (ja) * | 2007-10-30 | 2009-06-18 | Mitsubishi Materials Corp | ＺｎＯ蒸着材とその製造方法 |
| US8197908B2 (en) | 2008-03-14 | 2012-06-12 | Hestia Tec, Llc | Method for preparing electrically conducting materials |
| US8895427B2 (en) | 2008-09-04 | 2014-11-25 | Kaneka Corporation | Substrate having a transparent electrode and method for producing the same |
| JP2012144409A (ja) * | 2011-01-14 | 2012-08-02 | Tosoh Corp | 酸化物焼結体、それから成るターゲットおよび透明導電膜 |
| JPWO2016092902A1 (ja) * | 2014-12-09 | 2017-09-21 | リンテック株式会社 | 透明導電膜及び透明導電膜の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0372011B2 (enrdf_load_stackoverflow) | 1991-11-15 |
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