JPS61195126U - - Google Patents

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Publication number
JPS61195126U
JPS61195126U JP5904285U JP5904285U JPS61195126U JP S61195126 U JPS61195126 U JP S61195126U JP 5904285 U JP5904285 U JP 5904285U JP 5904285 U JP5904285 U JP 5904285U JP S61195126 U JPS61195126 U JP S61195126U
Authority
JP
Japan
Prior art keywords
semiconductor device
control signal
gate electrode
channel
channel mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5904285U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5904285U priority Critical patent/JPS61195126U/ja
Publication of JPS61195126U publication Critical patent/JPS61195126U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例を示す回路図、第2図
は第1図に示された実施例の動作を示す波形図、
第3図は従来例を示す回路図、第4図は第3図の
動作を示す波形図である。 主な図番の説明、4,10……トランスミツシ
ヨンゲート、7,8,9,11……インバータ。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, FIG. 2 is a waveform diagram showing the operation of the embodiment shown in FIG. 1,
FIG. 3 is a circuit diagram showing a conventional example, and FIG. 4 is a waveform diagram showing the operation of FIG. 3. Explanation of main drawing numbers: 4, 10...transmission gate, 7, 8, 9, 11...inverter.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 並列接続されてトランスミツシヨンゲートある
いはアナログスイツチ等を構成するNチヤンネル
MOSFET及びPチヤンネルMOSFETと、
該NチヤンネルMOSFETのゲート電極とPチ
ヤンネルMOSFETのゲート電極に互いに逆相
の制御信号を印加するために一方の制御信号線に
挿入された反転素子とを少なくとも備えた半導体
装置に於いて、前記反転素子によつて遅延される
時間と略等しい遅延時間を有する遅延素子を他方
の制御信号に挿入したことを特徴とする半導体装
置。
N-channel MOSFETs and P-channel MOSFETs that are connected in parallel to form a transmission gate or analog switch, etc.;
In the semiconductor device, the semiconductor device includes at least an inverting element inserted into one control signal line for applying control signals of mutually opposite phases to the gate electrode of the N-channel MOSFET and the gate electrode of the P-channel MOSFET. A semiconductor device characterized in that a delay element having a delay time substantially equal to the time delayed by the element is inserted into the other control signal.
JP5904285U 1985-04-19 1985-04-19 Pending JPS61195126U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5904285U JPS61195126U (en) 1985-04-19 1985-04-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5904285U JPS61195126U (en) 1985-04-19 1985-04-19

Publications (1)

Publication Number Publication Date
JPS61195126U true JPS61195126U (en) 1986-12-05

Family

ID=30585099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5904285U Pending JPS61195126U (en) 1985-04-19 1985-04-19

Country Status (1)

Country Link
JP (1) JPS61195126U (en)

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