JPS61184331U - - Google Patents
Info
- Publication number
- JPS61184331U JPS61184331U JP6736785U JP6736785U JPS61184331U JP S61184331 U JPS61184331 U JP S61184331U JP 6736785 U JP6736785 U JP 6736785U JP 6736785 U JP6736785 U JP 6736785U JP S61184331 U JPS61184331 U JP S61184331U
- Authority
- JP
- Japan
- Prior art keywords
- switching transistor
- time
- voltage
- circuit
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Description
第１図はこの考案の一実施例の回路図、第２図
は上記実施例の比較電圧発生回路の比較電圧曲線
を示すグラフ、第３図は従来例の比較電圧曲線を
示すグラフである。
１０１……負荷、１０２……ドライバ回路、１
０３……スイツチングトランジスタ、１０４……
比較電圧発生回路、１０５……出力、１０６……
比較器、１０７……スイツチ回路、１０８……第
２ＭＯＳトランジスタ、１０９……コンデンサ、
１１０，１１１，１１２……分圧抵抗、１１３…
…第３ＭＯＳトランジスタ、１１４……インバー
タ、１１５……遅延回路、１１６……ＡＮＤゲー
ト。
FIG. 1 is a circuit diagram of an embodiment of this invention, FIG. 2 is a graph showing a comparison voltage curve of the comparison voltage generating circuit of the above embodiment, and FIG. 3 is a graph showing a comparison voltage curve of a conventional example. 101...Load, 102...Driver circuit, 1
03... Switching transistor, 104...
Comparison voltage generation circuit, 105...output, 106...
Comparator, 107... Switch circuit, 108... Second MOS transistor, 109... Capacitor,
110, 111, 112...Voltage dividing resistor, 113...
...Third MOS transistor, 114...Inverter, 115...Delay circuit, 116...AND gate.
Claims (1)
スタによりこの負荷を流れる電流をスイツチング
する半導体スイツチ回路において、前記スイツチ
ングトランジスタがオンする時間を開始時間とし
第１の電圧より第１の時間を経て第２の電圧に連
続的に変化する信号を出力とする電圧発生回路と
、この電圧発生回路の出力を第１の入力とし、前
記負荷とスイツチングトランジスタとの接続点の
信号を第２の入力とする比較回路と、前記スイツ
チングトランジスタがオンする時間を開始時間と
する第２の時間が経過した後にこの比較回路の出
力信号をスイツチングトランジスタの入力に伝え
てそのオン、オフを制御するスイツチング手段と
を備えて成ることを特徴とする半導体スイツチ回
路。 In a semiconductor switch circuit in which a switching transistor connected in series with a load switches the current flowing through the load, the time when the switching transistor is turned on is defined as a start time, and a first voltage is applied to a second voltage after a first time. Comparison of a voltage generation circuit that outputs a signal that continuously changes in voltage, the output of this voltage generation circuit as the first input, and the signal at the connection point between the load and the switching transistor as the second input. a circuit, and a switching means for transmitting the output signal of the comparison circuit to the input of the switching transistor to control its on/off after a second time period whose starting time is the time when the switching transistor is turned on has elapsed. A semiconductor switch circuit characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6736785U JPS61184331U (en) | 1985-05-09 | 1985-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6736785U JPS61184331U (en) | 1985-05-09 | 1985-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61184331U true JPS61184331U (en) | 1986-11-17 |
Family
ID=30601125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6736785U Pending JPS61184331U (en) | 1985-05-09 | 1985-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61184331U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004312924A (en) * | 2003-04-09 | 2004-11-04 | Mitsubishi Electric Corp | Drive circuit for semiconductor device |
-
1985
- 1985-05-09 JP JP6736785U patent/JPS61184331U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004312924A (en) * | 2003-04-09 | 2004-11-04 | Mitsubishi Electric Corp | Drive circuit for semiconductor device |