JPS61184332U - - Google Patents
Info
- Publication number
- JPS61184332U JPS61184332U JP6736885U JP6736885U JPS61184332U JP S61184332 U JPS61184332 U JP S61184332U JP 6736885 U JP6736885 U JP 6736885U JP 6736885 U JP6736885 U JP 6736885U JP S61184332 U JPS61184332 U JP S61184332U
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- power mos
- voltage
- detection circuit
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
Description
第1図はこの考案の一実施例の回路図、第2図
は上記実施例の動作を説明する電圧特性図、第3
図は上記実施例の第2比較回路の比較電圧発生部
の回路構成図、第4図は上記比較電圧発生部の電
圧特性図、第5図は従来例の比較電圧特性図であ
る。
101……パワーMOSトランジスタ、102
……負荷、103……第1比較回路、105……
第2比較回路、107……ANDゲート、108
……第2MOSトランジスタ。
Fig. 1 is a circuit diagram of one embodiment of this invention, Fig. 2 is a voltage characteristic diagram explaining the operation of the above embodiment, and Fig. 3 is a voltage characteristic diagram illustrating the operation of the above embodiment.
FIG. 4 is a circuit configuration diagram of the comparison voltage generation section of the second comparison circuit of the above embodiment, FIG. 4 is a voltage characteristic diagram of the comparison voltage generation section, and FIG. 5 is a comparison voltage characteristic diagram of the conventional example. 101...Power MOS transistor, 102
...Load, 103...First comparison circuit, 105...
Second comparison circuit, 107...AND gate, 108
...Second MOS transistor.
Claims (1)
をスイツチングするパワーMOSトランジスタと
、このパワーMOSトランジスタのゲート電圧が
第1の電圧に達したことを検出する第1の検出回
路と、前記パワーMOSトランジスタと負荷との
接続点の電圧が第2の電圧に達したことを検出す
る第2の検出回路と、前記第1の検出回路検出出
力と前記第2の検出回路検出出力とのAND条件
で前記パワーMOSトランジスタをOFF状態と
するスイツチング手段とを備えて成ることを特徴
とする半導体スイツチ回路。 a power MOS transistor connected in series with a load to switch the current flowing through the load; a first detection circuit that detects that the gate voltage of the power MOS transistor has reached a first voltage; and the power MOS transistor. a second detection circuit that detects that the voltage at the connection point between and the load has reached a second voltage; and the AND condition of the detection output of the first detection circuit and the detection output of the second detection circuit. 1. A semiconductor switch circuit comprising switching means for turning off a power MOS transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6736885U JPS61184332U (en) | 1985-05-09 | 1985-05-09 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6736885U JPS61184332U (en) | 1985-05-09 | 1985-05-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61184332U true JPS61184332U (en) | 1986-11-17 |
Family
ID=30601127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6736885U Pending JPS61184332U (en) | 1985-05-09 | 1985-05-09 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61184332U (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120787A (en) * | 1992-10-09 | 1994-04-28 | Mitsubishi Electric Corp | Overcurrent protecting circuit for power device and semiconductor integrated circuit device |
JP2002084173A (en) * | 2000-09-11 | 2002-03-22 | Mitsubishi Electric Corp | Power semiconductor device and overcurrent protection circuit |
JP2010246175A (en) * | 2009-04-01 | 2010-10-28 | Denso Corp | Drive device for power conversion circuit |
WO2015114788A1 (en) * | 2014-01-31 | 2015-08-06 | 株式会社日立製作所 | Semiconductor element protection circuit |
JP2023018194A (en) * | 2021-07-27 | 2023-02-08 | 三菱電機株式会社 | Power conversion device |
-
1985
- 1985-05-09 JP JP6736885U patent/JPS61184332U/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120787A (en) * | 1992-10-09 | 1994-04-28 | Mitsubishi Electric Corp | Overcurrent protecting circuit for power device and semiconductor integrated circuit device |
JP2002084173A (en) * | 2000-09-11 | 2002-03-22 | Mitsubishi Electric Corp | Power semiconductor device and overcurrent protection circuit |
JP2010246175A (en) * | 2009-04-01 | 2010-10-28 | Denso Corp | Drive device for power conversion circuit |
WO2015114788A1 (en) * | 2014-01-31 | 2015-08-06 | 株式会社日立製作所 | Semiconductor element protection circuit |
JP2023018194A (en) * | 2021-07-27 | 2023-02-08 | 三菱電機株式会社 | Power conversion device |