JPS61184332U - - Google Patents

Info

Publication number
JPS61184332U
JPS61184332U JP6736885U JP6736885U JPS61184332U JP S61184332 U JPS61184332 U JP S61184332U JP 6736885 U JP6736885 U JP 6736885U JP 6736885 U JP6736885 U JP 6736885U JP S61184332 U JPS61184332 U JP S61184332U
Authority
JP
Japan
Prior art keywords
mos transistor
power mos
voltage
detection circuit
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6736885U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6736885U priority Critical patent/JPS61184332U/ja
Publication of JPS61184332U publication Critical patent/JPS61184332U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例の回路図、第2図
は上記実施例の動作を説明する電圧特性図、第3
図は上記実施例の第2比較回路の比較電圧発生部
の回路構成図、第4図は上記比較電圧発生部の電
圧特性図、第5図は従来例の比較電圧特性図であ
る。 101……パワーMOSトランジスタ、102
……負荷、103……第1比較回路、105……
第2比較回路、107……ANDゲート、108
……第2MOSトランジスタ。
Fig. 1 is a circuit diagram of one embodiment of this invention, Fig. 2 is a voltage characteristic diagram explaining the operation of the above embodiment, and Fig. 3 is a voltage characteristic diagram illustrating the operation of the above embodiment.
FIG. 4 is a circuit configuration diagram of the comparison voltage generation section of the second comparison circuit of the above embodiment, FIG. 4 is a voltage characteristic diagram of the comparison voltage generation section, and FIG. 5 is a comparison voltage characteristic diagram of the conventional example. 101...Power MOS transistor, 102
...Load, 103...First comparison circuit, 105...
Second comparison circuit, 107...AND gate, 108
...Second MOS transistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 負荷と直列に接続されてこの負荷に流れる電流
をスイツチングするパワーMOSトランジスタと
、このパワーMOSトランジスタのゲート電圧が
第1の電圧に達したことを検出する第1の検出回
路と、前記パワーMOSトランジスタと負荷との
接続点の電圧が第2の電圧に達したことを検出す
る第2の検出回路と、前記第1の検出回路検出出
力と前記第2の検出回路検出出力とのAND条件
で前記パワーMOSトランジスタをOFF状態と
するスイツチング手段とを備えて成ることを特徴
とする半導体スイツチ回路。
a power MOS transistor connected in series with a load to switch the current flowing through the load; a first detection circuit that detects that the gate voltage of the power MOS transistor has reached a first voltage; and the power MOS transistor. a second detection circuit that detects that the voltage at the connection point between and the load has reached a second voltage; and the AND condition of the detection output of the first detection circuit and the detection output of the second detection circuit. 1. A semiconductor switch circuit comprising switching means for turning off a power MOS transistor.
JP6736885U 1985-05-09 1985-05-09 Pending JPS61184332U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6736885U JPS61184332U (en) 1985-05-09 1985-05-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6736885U JPS61184332U (en) 1985-05-09 1985-05-09

Publications (1)

Publication Number Publication Date
JPS61184332U true JPS61184332U (en) 1986-11-17

Family

ID=30601127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6736885U Pending JPS61184332U (en) 1985-05-09 1985-05-09

Country Status (1)

Country Link
JP (1) JPS61184332U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120787A (en) * 1992-10-09 1994-04-28 Mitsubishi Electric Corp Overcurrent protecting circuit for power device and semiconductor integrated circuit device
JP2002084173A (en) * 2000-09-11 2002-03-22 Mitsubishi Electric Corp Power semiconductor device and overcurrent protection circuit
JP2010246175A (en) * 2009-04-01 2010-10-28 Denso Corp Drive device for power conversion circuit
WO2015114788A1 (en) * 2014-01-31 2015-08-06 株式会社日立製作所 Semiconductor element protection circuit
JP2023018194A (en) * 2021-07-27 2023-02-08 三菱電機株式会社 Power conversion device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120787A (en) * 1992-10-09 1994-04-28 Mitsubishi Electric Corp Overcurrent protecting circuit for power device and semiconductor integrated circuit device
JP2002084173A (en) * 2000-09-11 2002-03-22 Mitsubishi Electric Corp Power semiconductor device and overcurrent protection circuit
JP2010246175A (en) * 2009-04-01 2010-10-28 Denso Corp Drive device for power conversion circuit
WO2015114788A1 (en) * 2014-01-31 2015-08-06 株式会社日立製作所 Semiconductor element protection circuit
JP2023018194A (en) * 2021-07-27 2023-02-08 三菱電機株式会社 Power conversion device

Similar Documents

Publication Publication Date Title
JPS61184332U (en)
JPS6437135U (en)
JPS6270629U (en)
JPH0249338U (en)
JPS61180556U (en)
JPH0314929U (en)
JPH02137131U (en)
JPH02128429U (en)
JPH02133153U (en)
JPS6160317U (en)
JPH0472878U (en)
JPS6270644U (en)
JPS6333382U (en)
JPS6430682U (en)
JPS61184331U (en)
JPS62114459U (en)
JPH01110525U (en)
JPS61171495U (en)
JPS6315634U (en)
JPS61199191U (en)
JPS62186532U (en)
JPS61179834U (en)
JPS61161995U (en)
JPS6289009U (en)
JPS6214936U (en)