JPS6152835U - - Google Patents
Info
- Publication number
- JPS6152835U JPS6152835U JP13809384U JP13809384U JPS6152835U JP S6152835 U JPS6152835 U JP S6152835U JP 13809384 U JP13809384 U JP 13809384U JP 13809384 U JP13809384 U JP 13809384U JP S6152835 U JPS6152835 U JP S6152835U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- mosfet
- potential
- mosfets
- connects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Description
第１図は本考案回路の１実施例の回路構成図、
第２図は同回路の入出力信号の波形図、第３図は
同回路のデバイス構造の断面図、第４図は周知の
相補形MOSFET回路の回路構成図である。
５，６…第１、第２のダイオード、１，２…第
１、第２の導電形MOSFET。
FIG. 1 is a circuit configuration diagram of one embodiment of the circuit of the present invention,
FIG. 2 is a waveform diagram of input and output signals of the same circuit, FIG. 3 is a sectional view of the device structure of the same circuit, and FIG. 4 is a circuit configuration diagram of a well-known complementary MOSFET circuit. 5, 6...first and second diodes, 1,2...first and second conductivity type MOSFETs.
Claims (1)
有し、第１の電位点に第１のダイオードを順方向
に接続し、該第１のダイオードの他端にソースが
接続された第１の導電形（例えばＰチヤンネル形
）MOSFETと、第２の電位点に第２のダイオードを
順方向に接続し、該第２のダイオードの他端にソ
ースが接続された第２の導電形（例えばＮチヤン
ネル形）MOSFETとを有し、上記第１、第２の各MO
SFETのドレインを接続しこの接続点を出力端子と
すると共に上記第１、第２の各MOSFETのゲートを
接続して入力端子としてなる相補型MOSFET回路。 It has first and second potential points with a potential difference between them, a first diode is connected to the first potential point in a forward direction, and a source is connected to the other end of the first diode. A MOSFET of a first conductivity type (for example, P-channel type), a second diode connected to a second potential point in the forward direction, and a source of the second conductivity type connected to the other end of the second diode. (for example, N-channel type) MOSFET, and each of the first and second MOSFETs
A complementary MOSFET circuit that connects the drains of the SFETs and uses this connection point as an output terminal, and connects the gates of the first and second MOSFETs as an input terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13809384U JPS6152835U (en) | 1984-09-12 | 1984-09-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13809384U JPS6152835U (en) | 1984-09-12 | 1984-09-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6152835U true JPS6152835U (en) | 1986-04-09 |
Family
ID=30696490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13809384U Pending JPS6152835U (en) | 1984-09-12 | 1984-09-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6152835U (en) |
-
1984
- 1984-09-12 JP JP13809384U patent/JPS6152835U/ja active Pending