JPS6381518U - - Google Patents

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Publication number
JPS6381518U
JPS6381518U JP17682686U JP17682686U JPS6381518U JP S6381518 U JPS6381518 U JP S6381518U JP 17682686 U JP17682686 U JP 17682686U JP 17682686 U JP17682686 U JP 17682686U JP S6381518 U JPS6381518 U JP S6381518U
Authority
JP
Japan
Prior art keywords
mosfet
terminal
drain
source
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17682686U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17682686U priority Critical patent/JPS6381518U/ja
Publication of JPS6381518U publication Critical patent/JPS6381518U/ja
Pending legal-status Critical Current

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  • Amplitude Modulation (AREA)
  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図はそれぞれ本考案の第1及び
第2の実施例の回路図、第3図は従来の2重平衡
差動増幅器の一例の回路図である。 B……バイアス回路、R11,R12,R21
,R22……負荷抵抗、Q〜Q……NPNト
ランジスタ、Q11〜Q26……MOSFET、
SI,SI……入力信号、SO……出力信号
、V11,V12……信号入力端子、VDD,V
SS……電源端子、VOUT……信号出力端子。
1 and 2 are circuit diagrams of first and second embodiments of the present invention, respectively, and FIG. 3 is a circuit diagram of an example of a conventional double-balanced differential amplifier. B...Bias circuit, R 11 , R 12 , R 21
, R22 ...Load resistance, Q1 - Q7 ...NPN transistor, Q11 - Q26 ...MOSFET,
SI 1 , SI 2 ... input signal, SO ... output signal, V 11 , V 12 ... signal input terminal, VDD, V
SS...Power supply terminal, VOUT...Signal output terminal.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 第1のMOSFETと、ソースが該第1のMO
SFETのソースに接続されドレインが信号出力
端子に接続される第2のMOSFETと、ドレイ
ンが前記第1のMOSFETのドレインに接続さ
れゲートが前記第2のMOSFETのゲートと第
1の信号入力端子に接続される第3のMOSFE
Tと、ソースが該第3のMOSFETのソースに
接続されドレインが前記第2のMOSFETのド
レインに接続されゲートが前記第1のMOSFE
Tのゲートに接続される第4のMOSFETと、
ドレインが前記第1のMOSFETのソースに接
続される第5のMOSFETと、ドレインが前記
第3のMOSFETのソースに接続されソースが
前記第5のMOSFETのソースに接続されゲー
トが第2の信号入力端子に接続される第6のMO
SFETと、一方の端子が前記第1のMOSFE
Tのドレインに接続され他方の端子が第1の電源
端子に接続される第1の負荷抵抗と、一方の端子
が前記第2のMOSFETのドレインに接続され
他方の端子が前記第1の電源端子に接続される第
2の負荷抵抗と、一方の端子が前記第5のMOS
FETのソースに接続され他方の端子が第2の電
源端子に接続される定電流源と、一方の端子が前
記第1の電源端子に接続され他方の端子が前記第
2の電源端子に接続され第1の出力端が前記第1
のMOSFETのゲートに接続され第2の出力端
が前記第5のMOSFETのゲートに接続される
バイアス回路とを含むことを特徴とする2重平衡
差動増幅器。
a first MOSFET, and a source of the first MOSFET;
a second MOSFET whose drain is connected to the source of the SFET and whose drain is connected to the signal output terminal; and whose drain is connected to the drain of the first MOSFET and whose gate is connected to the gate of the second MOSFET and the first signal input terminal. Third MOSFE connected
T, the source is connected to the source of the third MOSFET, the drain is connected to the drain of the second MOSFET, and the gate is connected to the first MOSFET.
a fourth MOSFET connected to the gate of T;
a fifth MOSFET having a drain connected to the source of the first MOSFET, a drain connected to the source of the third MOSFET, a source connected to the source of the fifth MOSFET, and a gate having a second signal input; The sixth MO connected to the terminal
SFET, one terminal of which is connected to the first MOSFET.
a first load resistor connected to the drain of the T and whose other terminal is connected to the first power supply terminal; and one terminal connected to the drain of the second MOSFET and whose other terminal is the first power supply terminal. a second load resistor connected to the fifth MOS;
a constant current source connected to the source of the FET and having the other terminal connected to the second power supply terminal; and one terminal connected to the first power supply terminal and the other terminal connected to the second power supply terminal. The first output end is the first output terminal.
a bias circuit connected to the gate of the fifth MOSFET and having a second output terminal connected to the gate of the fifth MOSFET.
JP17682686U 1986-11-17 1986-11-17 Pending JPS6381518U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17682686U JPS6381518U (en) 1986-11-17 1986-11-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17682686U JPS6381518U (en) 1986-11-17 1986-11-17

Publications (1)

Publication Number Publication Date
JPS6381518U true JPS6381518U (en) 1988-05-28

Family

ID=31117450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17682686U Pending JPS6381518U (en) 1986-11-17 1986-11-17

Country Status (1)

Country Link
JP (1) JPS6381518U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244220A (en) * 2011-05-16 2012-12-10 Nippon Soken Inc Ringing suppression circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244220A (en) * 2011-05-16 2012-12-10 Nippon Soken Inc Ringing suppression circuit

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