JPS61193456A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法Info
- Publication number
- JPS61193456A JPS61193456A JP60033183A JP3318385A JPS61193456A JP S61193456 A JPS61193456 A JP S61193456A JP 60033183 A JP60033183 A JP 60033183A JP 3318385 A JP3318385 A JP 3318385A JP S61193456 A JPS61193456 A JP S61193456A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon wafer
- thermal oxide
- wafer
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 3
- 150000002367 halogens Chemical class 0.000 claims abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033183A JPS61193456A (ja) | 1985-02-21 | 1985-02-21 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033183A JPS61193456A (ja) | 1985-02-21 | 1985-02-21 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61193456A true JPS61193456A (ja) | 1986-08-27 |
| JPH0380338B2 JPH0380338B2 (enrdf_load_stackoverflow) | 1991-12-24 |
Family
ID=12379380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60033183A Granted JPS61193456A (ja) | 1985-02-21 | 1985-02-21 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61193456A (enrdf_load_stackoverflow) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226029A (ja) * | 1987-03-16 | 1988-09-20 | Oki Electric Ind Co Ltd | 絶縁膜形成方法 |
| JPH04168768A (ja) * | 1990-10-31 | 1992-06-16 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH04348524A (ja) * | 1991-05-27 | 1992-12-03 | Nec Corp | 半導体装置の製造方法 |
| US5508800A (en) * | 1990-06-25 | 1996-04-16 | Kabushiki Kaisha Toshiba | Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate |
| US5543648A (en) * | 1992-01-31 | 1996-08-06 | Canon Kabushiki Kaisha | Semiconductor member and semiconductor device having a substrate with a hydrogenated surface |
| US6179910B1 (en) | 1998-09-14 | 2001-01-30 | Komatsu Electronic Metals Co., Ltd | Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors |
| JP2004087960A (ja) * | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO2004044278A1 (ja) * | 2002-11-14 | 2004-05-27 | Komatsu Denshi Kinzoku Kabushiki Kaisha | シリコンウェーハとその製造方法および製造装置 |
| US6800132B1 (en) | 1999-08-27 | 2004-10-05 | Komatsu Denshi Sinzoku Kabushiki | Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
| US7014704B2 (en) | 2003-06-06 | 2006-03-21 | Sumitomo Mitsubishi Silicon Corporation | Method for growing silicon single crystal |
| US7211141B2 (en) | 2003-08-12 | 2007-05-01 | Shin-Etsu Handotai Co., Ltd. | Method for producing a wafer |
| WO2014013809A1 (ja) * | 2012-07-19 | 2014-01-23 | 大日本スクリーン製造株式会社 | 基板処理方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4376505B2 (ja) * | 2002-10-30 | 2009-12-02 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5091272A (enrdf_load_stackoverflow) * | 1973-12-12 | 1975-07-21 | ||
| JPS51115299A (en) * | 1975-04-03 | 1976-10-09 | Mitsubishi Electric Corp | Formation process of silicon oxide film |
| JPS51147250A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Treatment method of semiconductor substrate |
| JPS5286070A (en) * | 1976-01-12 | 1977-07-16 | Rca Corp | Method of manufacturing concocted oxide |
-
1985
- 1985-02-21 JP JP60033183A patent/JPS61193456A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5091272A (enrdf_load_stackoverflow) * | 1973-12-12 | 1975-07-21 | ||
| JPS51115299A (en) * | 1975-04-03 | 1976-10-09 | Mitsubishi Electric Corp | Formation process of silicon oxide film |
| JPS51147250A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Treatment method of semiconductor substrate |
| JPS5286070A (en) * | 1976-01-12 | 1977-07-16 | Rca Corp | Method of manufacturing concocted oxide |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63226029A (ja) * | 1987-03-16 | 1988-09-20 | Oki Electric Ind Co Ltd | 絶縁膜形成方法 |
| US5508800A (en) * | 1990-06-25 | 1996-04-16 | Kabushiki Kaisha Toshiba | Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate |
| JPH04168768A (ja) * | 1990-10-31 | 1992-06-16 | Nec Yamagata Ltd | 半導体装置の製造方法 |
| JPH04348524A (ja) * | 1991-05-27 | 1992-12-03 | Nec Corp | 半導体装置の製造方法 |
| US5543648A (en) * | 1992-01-31 | 1996-08-06 | Canon Kabushiki Kaisha | Semiconductor member and semiconductor device having a substrate with a hydrogenated surface |
| EP0828289A1 (en) * | 1992-01-31 | 1998-03-11 | Canon Kabushiki Kaisha | Semiconductor wafer with low surface roughness and semiconductor device |
| US6179910B1 (en) | 1998-09-14 | 2001-01-30 | Komatsu Electronic Metals Co., Ltd | Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors |
| US6800132B1 (en) | 1999-08-27 | 2004-10-05 | Komatsu Denshi Sinzoku Kabushiki | Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
| JP2004087960A (ja) * | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO2004044278A1 (ja) * | 2002-11-14 | 2004-05-27 | Komatsu Denshi Kinzoku Kabushiki Kaisha | シリコンウェーハとその製造方法および製造装置 |
| US7014704B2 (en) | 2003-06-06 | 2006-03-21 | Sumitomo Mitsubishi Silicon Corporation | Method for growing silicon single crystal |
| US7211141B2 (en) | 2003-08-12 | 2007-05-01 | Shin-Etsu Handotai Co., Ltd. | Method for producing a wafer |
| WO2014013809A1 (ja) * | 2012-07-19 | 2014-01-23 | 大日本スクリーン製造株式会社 | 基板処理方法 |
| JP2014022588A (ja) * | 2012-07-19 | 2014-02-03 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
| US9343311B2 (en) | 2012-07-19 | 2016-05-17 | SCREEN Holdings Co., Ltd. | Substrate treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0380338B2 (enrdf_load_stackoverflow) | 1991-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |