JPS61193456A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS61193456A
JPS61193456A JP60033183A JP3318385A JPS61193456A JP S61193456 A JPS61193456 A JP S61193456A JP 60033183 A JP60033183 A JP 60033183A JP 3318385 A JP3318385 A JP 3318385A JP S61193456 A JPS61193456 A JP S61193456A
Authority
JP
Japan
Prior art keywords
oxide film
silicon wafer
thermal oxide
wafer
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60033183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0380338B2 (enrdf_load_stackoverflow
Inventor
Kikuo Yamabe
紀久夫 山部
Norihei Takai
高井　法平
Hiroshi Shirai
宏 白井
Masaharu Watanabe
正晴 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Priority to JP60033183A priority Critical patent/JPS61193456A/ja
Publication of JPS61193456A publication Critical patent/JPS61193456A/ja
Publication of JPH0380338B2 publication Critical patent/JPH0380338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP60033183A 1985-02-21 1985-02-21 半導体素子の製造方法 Granted JPS61193456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60033183A JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033183A JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61193456A true JPS61193456A (ja) 1986-08-27
JPH0380338B2 JPH0380338B2 (enrdf_load_stackoverflow) 1991-12-24

Family

ID=12379380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60033183A Granted JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61193456A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226029A (ja) * 1987-03-16 1988-09-20 Oki Electric Ind Co Ltd 絶縁膜形成方法
JPH04168768A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd 半導体装置の製造方法
JPH04348524A (ja) * 1991-05-27 1992-12-03 Nec Corp 半導体装置の製造方法
US5508800A (en) * 1990-06-25 1996-04-16 Kabushiki Kaisha Toshiba Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate
US5543648A (en) * 1992-01-31 1996-08-06 Canon Kabushiki Kaisha Semiconductor member and semiconductor device having a substrate with a hydrogenated surface
US6179910B1 (en) 1998-09-14 2001-01-30 Komatsu Electronic Metals Co., Ltd Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors
JP2004087960A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
WO2004044278A1 (ja) * 2002-11-14 2004-05-27 Komatsu Denshi Kinzoku Kabushiki Kaisha シリコンウェーハとその製造方法および製造装置
US6800132B1 (en) 1999-08-27 2004-10-05 Komatsu Denshi Sinzoku Kabushiki Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer
US7014704B2 (en) 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
US7211141B2 (en) 2003-08-12 2007-05-01 Shin-Etsu Handotai Co., Ltd. Method for producing a wafer
WO2014013809A1 (ja) * 2012-07-19 2014-01-23 大日本スクリーン製造株式会社 基板処理方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4376505B2 (ja) * 2002-10-30 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091272A (enrdf_load_stackoverflow) * 1973-12-12 1975-07-21
JPS51115299A (en) * 1975-04-03 1976-10-09 Mitsubishi Electric Corp Formation process of silicon oxide film
JPS51147250A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Treatment method of semiconductor substrate
JPS5286070A (en) * 1976-01-12 1977-07-16 Rca Corp Method of manufacturing concocted oxide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091272A (enrdf_load_stackoverflow) * 1973-12-12 1975-07-21
JPS51115299A (en) * 1975-04-03 1976-10-09 Mitsubishi Electric Corp Formation process of silicon oxide film
JPS51147250A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Treatment method of semiconductor substrate
JPS5286070A (en) * 1976-01-12 1977-07-16 Rca Corp Method of manufacturing concocted oxide

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226029A (ja) * 1987-03-16 1988-09-20 Oki Electric Ind Co Ltd 絶縁膜形成方法
US5508800A (en) * 1990-06-25 1996-04-16 Kabushiki Kaisha Toshiba Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate
JPH04168768A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd 半導体装置の製造方法
JPH04348524A (ja) * 1991-05-27 1992-12-03 Nec Corp 半導体装置の製造方法
US5543648A (en) * 1992-01-31 1996-08-06 Canon Kabushiki Kaisha Semiconductor member and semiconductor device having a substrate with a hydrogenated surface
EP0828289A1 (en) * 1992-01-31 1998-03-11 Canon Kabushiki Kaisha Semiconductor wafer with low surface roughness and semiconductor device
US6179910B1 (en) 1998-09-14 2001-01-30 Komatsu Electronic Metals Co., Ltd Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors
US6800132B1 (en) 1999-08-27 2004-10-05 Komatsu Denshi Sinzoku Kabushiki Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer
JP2004087960A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
WO2004044278A1 (ja) * 2002-11-14 2004-05-27 Komatsu Denshi Kinzoku Kabushiki Kaisha シリコンウェーハとその製造方法および製造装置
US7014704B2 (en) 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
US7211141B2 (en) 2003-08-12 2007-05-01 Shin-Etsu Handotai Co., Ltd. Method for producing a wafer
WO2014013809A1 (ja) * 2012-07-19 2014-01-23 大日本スクリーン製造株式会社 基板処理方法
JP2014022588A (ja) * 2012-07-19 2014-02-03 Dainippon Screen Mfg Co Ltd 基板処理方法
US9343311B2 (en) 2012-07-19 2016-05-17 SCREEN Holdings Co., Ltd. Substrate treatment method

Also Published As

Publication number Publication date
JPH0380338B2 (enrdf_load_stackoverflow) 1991-12-24

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Legal Events

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