JPH0380338B2 - - Google Patents

Info

Publication number
JPH0380338B2
JPH0380338B2 JP60033183A JP3318385A JPH0380338B2 JP H0380338 B2 JPH0380338 B2 JP H0380338B2 JP 60033183 A JP60033183 A JP 60033183A JP 3318385 A JP3318385 A JP 3318385A JP H0380338 B2 JPH0380338 B2 JP H0380338B2
Authority
JP
Japan
Prior art keywords
oxide film
semiconductor device
silicon wafer
thermal oxide
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60033183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61193456A (ja
Inventor
Kikuo Yamabe
Norihei Takai
Hiroshi Shirai
Masaharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Priority to JP60033183A priority Critical patent/JPS61193456A/ja
Publication of JPS61193456A publication Critical patent/JPS61193456A/ja
Publication of JPH0380338B2 publication Critical patent/JPH0380338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP60033183A 1985-02-21 1985-02-21 半導体素子の製造方法 Granted JPS61193456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60033183A JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033183A JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61193456A JPS61193456A (ja) 1986-08-27
JPH0380338B2 true JPH0380338B2 (enrdf_load_stackoverflow) 1991-12-24

Family

ID=12379380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60033183A Granted JPS61193456A (ja) 1985-02-21 1985-02-21 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61193456A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152965A (ja) * 2002-10-30 2004-05-27 Fujitsu Ltd 半導体装置の製造方法と半導体装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2680482B2 (ja) * 1990-06-25 1997-11-19 株式会社東芝 半導体基板、半導体基板と半導体装置の製造方法、並びに半導体基板の検査・評価方法
JPH0680655B2 (ja) * 1987-03-16 1994-10-12 沖電気工業株式会社 絶縁膜形成方法
JP2624366B2 (ja) * 1990-10-31 1997-06-25 山形日本電気株式会社 半導体装置の製造方法
JPH04348524A (ja) * 1991-05-27 1992-12-03 Nec Corp 半導体装置の製造方法
JP3187109B2 (ja) * 1992-01-31 2001-07-11 キヤノン株式会社 半導体部材およびその製造方法
JP4467096B2 (ja) 1998-09-14 2010-05-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶製造方法および半導体形成用ウェハ
US6800132B1 (en) 1999-08-27 2004-10-05 Komatsu Denshi Sinzoku Kabushiki Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer
JP2004087960A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
TWI265217B (en) * 2002-11-14 2006-11-01 Komatsu Denshi Kinzoku Kk Method and device for manufacturing silicon wafer, method for manufacturing silicon single crystal, and device for pulling up silicon single crystal
US7014704B2 (en) 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
KR20060040733A (ko) 2003-08-12 2006-05-10 신에쯔 한도타이 가부시키가이샤 웨이퍼의 제조방법
JP6157809B2 (ja) * 2012-07-19 2017-07-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091272A (enrdf_load_stackoverflow) * 1973-12-12 1975-07-21
JPS51115299A (en) * 1975-04-03 1976-10-09 Mitsubishi Electric Corp Formation process of silicon oxide film
JPS51147250A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Treatment method of semiconductor substrate
IN145547B (enrdf_load_stackoverflow) * 1976-01-12 1978-11-04 Rca Corp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152965A (ja) * 2002-10-30 2004-05-27 Fujitsu Ltd 半導体装置の製造方法と半導体装置

Also Published As

Publication number Publication date
JPS61193456A (ja) 1986-08-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees