JPH0527272B2 - - Google Patents

Info

Publication number
JPH0527272B2
JPH0527272B2 JP59040298A JP4029884A JPH0527272B2 JP H0527272 B2 JPH0527272 B2 JP H0527272B2 JP 59040298 A JP59040298 A JP 59040298A JP 4029884 A JP4029884 A JP 4029884A JP H0527272 B2 JPH0527272 B2 JP H0527272B2
Authority
JP
Japan
Prior art keywords
oxide film
oxygen
gate oxide
metal
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59040298A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186064A (ja
Inventor
Hidenao Tanaka
Kinya Kato
Tsutomu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59040298A priority Critical patent/JPS60186064A/ja
Publication of JPS60186064A publication Critical patent/JPS60186064A/ja
Publication of JPH0527272B2 publication Critical patent/JPH0527272B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59040298A 1984-03-05 1984-03-05 Ｍｏｓｆｅｔの製造方法 Granted JPS60186064A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59040298A JPS60186064A (ja) 1984-03-05 1984-03-05 Ｍｏｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59040298A JPS60186064A (ja) 1984-03-05 1984-03-05 Ｍｏｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS60186064A JPS60186064A (ja) 1985-09-21
JPH0527272B2 true JPH0527272B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=12576702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59040298A Granted JPS60186064A (ja) 1984-03-05 1984-03-05 Ｍｏｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS60186064A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754723A (ja) * 1993-08-19 1995-02-28 Komatsu Zenoah Co エンジンケース

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754723A (ja) * 1993-08-19 1995-02-28 Komatsu Zenoah Co エンジンケース

Also Published As

Publication number Publication date
JPS60186064A (ja) 1985-09-21

Similar Documents

Publication Publication Date Title
JP2937817B2 (ja) 半導体基板表面の酸化膜の形成方法及びｍｏｓ半導体デバイスの製造方法
JPS6072272A (ja) 半導体装置の製造方法
KR20030044800A (ko) 저저항 게이트 전극을 구비하는 반도체 장치
JPS609160A (ja) 半導体装置およびその製造方法
JPH0527272B2 (enrdf_load_stackoverflow)
JPS59200418A (ja) 半導体装置の製造方法
JP2997554B2 (ja) 半導体装置の製造方法
JPS6261345A (ja) 半導体装置の製造方法
JP2918914B2 (ja) 半導体装置及びその製造方法
JPS5966165A (ja) 電極配線およびその製造方法
JPH11186548A (ja) 半導体装置及びその製造方法
JP3067433B2 (ja) 半導体装置の製造方法
JPS58155767A (ja) Ｍｏｓ型半導体装置の製造方法
JP3238804B2 (ja) 半導体装置の製造方法
JPH02103930A (ja) 半導体装置の製造方法
JPH04158516A (ja) 半導体装置の製造方法
JPH07147403A (ja) 半導体装置およびその製造方法
JPS61135156A (ja) 半導体装置およびその製造方法
JPS59161072A (ja) 半導体装置
JPS61288427A (ja) 半導体装置の製造方法
JPS6057974A (ja) 半導体装置の製造方法
JPH06181219A (ja) 半導体装置の製造方法
KR100356817B1 (ko) 반도체장치의 콘택 형성방법
JP2668380B2 (ja) 半導体装置の製造方法
JPH0228893B2 (enrdf_load_stackoverflow)