JPS61188893A - 薄膜発光素子の製造方法 - Google Patents
薄膜発光素子の製造方法Info
- Publication number
- JPS61188893A JPS61188893A JP60028105A JP2810585A JPS61188893A JP S61188893 A JPS61188893 A JP S61188893A JP 60028105 A JP60028105 A JP 60028105A JP 2810585 A JP2810585 A JP 2810585A JP S61188893 A JPS61188893 A JP S61188893A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light emitting
- thin film
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60028105A JPS61188893A (ja) | 1985-02-14 | 1985-02-14 | 薄膜発光素子の製造方法 |
US07/023,912 US4721631A (en) | 1985-02-14 | 1987-03-09 | Method of manufacturing thin-film electroluminescent display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60028105A JPS61188893A (ja) | 1985-02-14 | 1985-02-14 | 薄膜発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61188893A true JPS61188893A (ja) | 1986-08-22 |
JPH0572078B2 JPH0572078B2 (enrdf_load_stackoverflow) | 1993-10-08 |
Family
ID=12239528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60028105A Granted JPS61188893A (ja) | 1985-02-14 | 1985-02-14 | 薄膜発光素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61188893A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6771019B1 (en) | 1999-05-14 | 2004-08-03 | Ifire Technology, Inc. | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202687A (ja) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | 薄膜エレクトロルミネツセンス素子 |
JPS60253193A (ja) * | 1984-05-29 | 1985-12-13 | アルプス電気株式会社 | アモルフアスシリコン系エレクトロルミネセンス装置及びその製造方法 |
-
1985
- 1985-02-14 JP JP60028105A patent/JPS61188893A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202687A (ja) * | 1984-03-27 | 1985-10-14 | 日本電気株式会社 | 薄膜エレクトロルミネツセンス素子 |
JPS60253193A (ja) * | 1984-05-29 | 1985-12-13 | アルプス電気株式会社 | アモルフアスシリコン系エレクトロルミネセンス装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0572078B2 (enrdf_load_stackoverflow) | 1993-10-08 |
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