JPS6117896B2 - - Google Patents

Info

Publication number
JPS6117896B2
JPS6117896B2 JP55098853A JP9885380A JPS6117896B2 JP S6117896 B2 JPS6117896 B2 JP S6117896B2 JP 55098853 A JP55098853 A JP 55098853A JP 9885380 A JP9885380 A JP 9885380A JP S6117896 B2 JPS6117896 B2 JP S6117896B2
Authority
JP
Japan
Prior art keywords
aluminum
copper
alloy
semiconductor
conductive wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55098853A
Other languages
English (en)
Other versions
JPS5616647A (en
Inventor
Bishofu Aruburehito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of JPS5616647A publication Critical patent/JPS5616647A/ja
Publication of JPS6117896B2 publication Critical patent/JPS6117896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y10T428/12438—Composite
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)

Description

【発明の詳細な説明】 この発明は特に半導体を装置支持体外部端子と
電気的に接続するための、0.01mm〜0.06mmの範囲
の直径をもつアルミニウム合金からなる極細導線
に関する。
半導体と装置支持体外部端子とを電気的に接続
するために、付随する不純物のほかに１％のケイ
素および残余がアルミニウムからなるアルミニウ
ム合金が使用されている。これらのアルミニウム
−ケイ素合金極細導線は実用上良好に動作するこ
とが判明した。しかし、これらには疲労現象が生
起すること、疲労現象は特に前記極細導線を半導
体と結合する場所（結合場所）とそれに続く自由
導線回路（ループ）との間の移行点において生起
することが観察された。装置への組込み−使用中
に半導体部材の衝撃および振動によつてそれは電
線を破損させる。
この発明の課題は一方では疲労現象を最低限に
低下した。他方ではアルミニウム−ケイ素合金か
ら造られた既知の極細導線と同様に良好な電気的
性質をもつ極細導線を造り出すことにある。
上述のような特長をもつこの発明による極細導
線に対する課題は付随する不可避な不純物は別と
して、３％〜５％の銅および残余はアルミニウム
からなるアルミニウム−銅合金の導線を提供する
ことにより解決される。特に銅が４％で残余がア
ルミニウムからなる合金が良好であることが判明
した。ここに述べる％とは重量％である。この発
明によるアルミニウム−銅合金からなる極細導線
は意外にも既知のアルミニウム−ケイ素合金極細
導線より良好な疲労特性をもつ。合金してないア
ルミニウムは強度が比較的低い。品質が良くなけ
ればならない結線用極細導線は合金してないアル
ミニウムからは造ることができない。
アルミニウムに銅を合金することによつて強度
特性が改善される。
(a) ３〜５％の銅含量 銅含量が３〜５％のアルミニウム合金の場合
にはアルミニウムは銅と固溶体を造り、この合
金の組織は均質である。
この合金の熱処理（溶体化処理）、次いで急
冷、引続いて行う焼なまし（析出硬化処理と呼
ばれる）は固溶体から銅の析出のために合金の
強度特性が改善される。
(b) ５％を超える銅含量 銅含量が多くなるにつれてアルミニウム−銅
合金の組織が不均質になる傾向が強まる。この
理由は銅の固溶限度が5.7％（548℃）の為であ
る。
この銅含量が５％を越えるアルミニウム−銅
合金を３〜５％の銅含量の合金の場合のように
析出硬化のための処理を行うと強度の向上は行
われず、逆に強度は低下する。加えて、銅含量
が多くなると共に脆化傾向が増大する。
従つて、５％を越える銅含量のアルミニウム
−銅合金は結線用の材料として不適当である。
(c) ３％未満の銅合金 この合金は銅含量が３〜５％の合金と同じよ
うな均質な組織をもつ。しかし、この合金の場
合には析出硬化効果が少なく、従つて銅含量が
３〜５％の合金の強度が得られない。
上述の理由により銅含量は３〜５％と限定し
た。
添付図においてこの発明による極細導線の疲労
特性と既知のアルミニウム−ケイ素合金極細導線
の疲労特性とを比較した。これら両方の供試導線
の直径は共に0.05mmであつた。両方の場合に均質
な組織をもつ導線について試験した。図の横軸に
は破損までの曲げサイクル数を目盛りし、縦軸に
は曲げ角度を目盛つた。15゜までの小曲げ角度で
はこの発明による極細導線は既知の極細導線より
ほぼ少くとも２乗倍大きい破損までの曲げサイク
ル数をもつ。すなわち非常に長い可使寿命をも
つ。図示の結果を得た試験は疲労現象の試験のた
めの普通の装置を使用して行つた。この試験では
導線は破断点として一定のマークを付した印のと
ころを抑え、一定の曲げ角度で電線が破断するま
で往復曲げ荷重をかけた。
この発明によるアルミニウム−銅合金極細導線
は超音波によつて該導線と装置の外部端子と結合
させおよび該導線と半導体結晶とを結合させる時
に特に良好な結果を生ずることが判明した。特に
極細導線は0.02mm〜0.05mmの範囲のものが良好で
ある。この発明による極細導線の製造は普通行う
ようにアルミニウム−銅（３％〜５％）合金の荒
引き線を極細導線に延伸することにより行われ
る。集積回路の活性成分（銅合金からなる装置支
持体上に結合するための主結合助材として通常、
アルミニウムまたは銀、アルミニウムや銀ほど一
般的ではないがしばしば金で被覆された半導体チ
ツプ）と装置支持体の外部結線との間の電気的接
続は、現在極細導線により行われている。この導
線の接続すなわち結線は超音波楔−楔結合法（楔
−楔結合法）または不活性ガス球結合法（不活性
ガス釘頭溶接法）により行われる。
超音波楔−楔結合法では導線の両端を集積回路
および装置支持体に楔形の超音波電極
（sonotrode）を用いて溶接する。
球結合法では水素焔中で火焔溶融により、また
はコンデンサー放電もしくは、時折誘導放電によ
り導線の自由端に球状に溶融して球を造り、この
球を下記の方法の一つまたは２つの方法により半
導体チツプに圧着溶接する： (i) 熱圧着法の場合には約300℃で溶接結合が生
ずる。
(ii) 熱音波法の場合には前記球を50℃〜200℃で
超音波により結合場所に溶接する。その後で溶
接した導線を輪に曲げ、溶接した導線の輪の他
端を超音波楔溶接法により装置の支持体に結合
する。
銅が４％で残余がアルミニウムのアルミニウム
−銅合金自体は既知である。それらは従来主とし
て軽合金部材の構成例えば航空機部材および自動
車部材の製造に使用されてきた。
【図面の簡単な説明】
図はこの発明による極細導線およびアルミニウ
ム−ケイ素導線の破損までのサイクル数と曲げ角
度との関係を示すグラフである。

Claims (1)

  1. 【特許請求の範囲】 １ 付随する不純物は別として、３％〜５％の銅
    と残余はアルミニウムとからなることを特徴とす
    る、0.01mm〜0.06mmの範囲の直径をもつ、半導体
    と装置支持体の外部端子とを電気的に接続するた
    めのアルミニウム合金極細導線。 ２ 銅が４％で残余がアルミニウムからなる特許
    請求の範囲第１項記載の極細導線。 ３ 導線の直径が0.02mm〜0.05mmの範囲にある特
    許請求の範囲第１項または第２項記載の極細導
    線。
JP9885380A 1979-07-21 1980-07-21 Aluminum alloy super fine conductive wire Granted JPS5616647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2929623A DE2929623C2 (de) 1979-07-21 1979-07-21 Feinstdraht aus einer Aluminiumlegierung

Publications (2)

Publication Number Publication Date
JPS5616647A JPS5616647A (en) 1981-02-17
JPS6117896B2 true JPS6117896B2 (ja) 1986-05-09

Family

ID=6076403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9885380A Granted JPS5616647A (en) 1979-07-21 1980-07-21 Aluminum alloy super fine conductive wire

Country Status (4)

Country Link
US (1) US4380775A (ja)
JP (1) JPS5616647A (ja)
DE (1) DE2929623C2 (ja)
GB (1) GB2056537B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3023528C2 (de) * 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Aluminium enthaltender Feinstdraht
DE3110978C2 (de) * 1981-03-20 1984-07-26 Vdo Adolf Schindling Ag, 6000 Frankfurt Lötfähiges Schichtensystem
DE3153395C2 (en) * 1981-02-12 1987-11-19 W.C. Heraeus Gmbh, 6450 Hanau, De Use of a very fine wire made of a copper/tin alloy
DE3104960A1 (de) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "feinstdraht"
JPS602848U (ja) * 1983-06-17 1985-01-10 三洋電機株式会社 半導体装置
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
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US4380775A (en) 1983-04-19
GB2056537A (en) 1981-03-18
DE2929623C2 (de) 1981-11-26
JPS5616647A (en) 1981-02-17
DE2929623A1 (de) 1981-01-29
GB2056537B (en) 1983-03-23

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