JPS61171135A - プラズマエッチング装置の制御方法 - Google Patents

プラズマエッチング装置の制御方法

Info

Publication number
JPS61171135A
JPS61171135A JP1201485A JP1201485A JPS61171135A JP S61171135 A JPS61171135 A JP S61171135A JP 1201485 A JP1201485 A JP 1201485A JP 1201485 A JP1201485 A JP 1201485A JP S61171135 A JPS61171135 A JP S61171135A
Authority
JP
Japan
Prior art keywords
etched
plasma etching
thermal relaxation
laser light
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1201485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527968B2 (cg-RX-API-DMAC7.html
Inventor
Katsuhiro Hirata
勝弘 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1201485A priority Critical patent/JPS61171135A/ja
Publication of JPS61171135A publication Critical patent/JPS61171135A/ja
Publication of JPH0527968B2 publication Critical patent/JPH0527968B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP1201485A 1985-01-24 1985-01-24 プラズマエッチング装置の制御方法 Granted JPS61171135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1201485A JPS61171135A (ja) 1985-01-24 1985-01-24 プラズマエッチング装置の制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1201485A JPS61171135A (ja) 1985-01-24 1985-01-24 プラズマエッチング装置の制御方法

Publications (2)

Publication Number Publication Date
JPS61171135A true JPS61171135A (ja) 1986-08-01
JPH0527968B2 JPH0527968B2 (cg-RX-API-DMAC7.html) 1993-04-22

Family

ID=11793736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1201485A Granted JPS61171135A (ja) 1985-01-24 1985-01-24 プラズマエッチング装置の制御方法

Country Status (1)

Country Link
JP (1) JPS61171135A (cg-RX-API-DMAC7.html)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
JPS5853833A (ja) * 1981-09-26 1983-03-30 Toshiba Corp プラズマエツチング装置
JPS5932122A (ja) * 1982-08-16 1984-02-21 Hitachi Ltd 表面改質装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device
JPS5776846A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Surface treating method for semiconductor
JPS5853833A (ja) * 1981-09-26 1983-03-30 Toshiba Corp プラズマエツチング装置
JPS5932122A (ja) * 1982-08-16 1984-02-21 Hitachi Ltd 表面改質装置

Also Published As

Publication number Publication date
JPH0527968B2 (cg-RX-API-DMAC7.html) 1993-04-22

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