JPS61168952A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To improve accuracy of a resistor, by constituting the impurities in the region at the corner of the resistor having a bent flat structure having the corner by high-concentration impurities, in comparison with the surrounding area of said region. CONSTITUTION:A resistor has a flat structure, which is bent in and L shape. The resistance value R1 of this resistor is basically the series resistances of two rectangle parts and a corner part. The resistance value of the corner part is sufficiently low with respect to the total resistance value R1 when the impurity concentration of the corner part 15 is made higher than that of other parts 12a and 12b. Since the resistance values of the rectangle parts 12a and 12b can be accurately designed, the accuracy of R1 can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and more particularly to the structure of a resistor used in a semiconductor integrated circuit device.

[Conventional technology]

Conventionally, semiconductor integrated circuit devices are composed of active elements such as transistors and diodes, and passive elements such as resistors and capacitors. Among these, a typical planar shape of the resistor is shown in Fig. 6), and a cross-sectional view is shown in Fig. 6 Φ). For example, forming a Kp type region 62t in an n type silicon substrate 61,
Openings 66a and 66b are provided in the oxide film 63 of the surface protection film and are connected to the metal arrangement 1Fii64a@64b. This structure has been confirmed both theoretically and experimentally. Here, ('+2 is the layer resistance value of the p-type region, W2 is the width, L
2 is the distance between the openings, and Rc2 is the contact resistance value determined by conditions such as the opening for taking out the metal wiring. In this way, in the case of one rectangular shape, the design value and the measured value match very well according to the above equation. [Problems to be Solved by the Invention] However, if high density is required, resistors cannot be freely arranged, so FIG.

A resistor having a curved planar structure with corners as shown in FIG. 8 is used. That is, in FIG. 7, the openings 76a, 76
The eighth resistor 72 has a curved planar structure with an angle between b and
In the figure, a resistor 82t having a zigzag structure is shown to increase the resistance value. There is no design formula for the resistance value of a resistor with a curved planar structure that has such corners (estimation of the corner portion), and there was no way to improve accuracy other than actually manufacturing it. . That is, this is because it varies depending on manufacturing conditions, the pattern width, the angle of the curve, etc. Therefore, when actually applying the product, it is necessary to manufacture the product once, analyze the data for each shape, and modify the shape and manufacturing conditions accordingly.

This has the disadvantage of prolonging the product development period.

The present invention seeks to provide a new structure that eliminates the above-mentioned drawbacks of the prior art. That is, the purpose of this invention is to provide a resistance value structure to which a theoretical formula, which has been well known in the past, can be applied to enable accurate resistance value design, thereby improving design accuracy and shortening product development time.

[Means for solving problems]

In the semiconductor integrated circuit device of the present invention, in the semiconductor integrated circuit device having a resistance value, at least one of the resistors has a curved planar structure having corners instead of a single rectangular structure, and at least one of the resistors has a curved planar structure having corners. Impurities are particularly dark when they are composed of impurities with a high concentration compared to the surrounding area.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings. Figures 1(a) and Φ) are a plan view of the first embodiment of the present invention and a sectional view taken along line AB@ in Figure 1(a). As shown, the resistor of this embodiment has an L-shaped planar structure.

The resistance value I (11) of this resistor is basically the series resistance of the two rectangular parts and the corner part, and is expressed by the following formula, where R
w is the resistance value s of the corner portion, and RCI is the contact resistance value determined by the conditions of the openings 16a, 16b for determining the number of metal wiring lines, etc., as described above. By setting the impurity concentration in the corner portion 15 to be higher than that in the other portions 12a and 12b, the accuracy of setting the value KtDfh as a sufficiently small value with respect to the overall resistance value BIK increases. Furthermore, if the angle conditions are conventionally constant, it is also possible to use the values.

FIG. 2 is a plan view of a second embodiment of the present invention, which corresponds to the conventional example shown in FIG. 8. In this embodiment, the opening 26J
The metal wiring for 1.26bK connection is omitted. In this embodiment as well, the corner portions 25a, 25b, 25c, 25d, 25
e, 25 fK are other parts 22a, 22b* 22CI
22d, 226°, 22f, and 22g are high concentration regions, and the low concentration portion plays the role of most of the resistance value.

3, 4, and 5 are the third and fourth figures of the present invention, respectively.
．． 6D in the plan view of the fifth embodiment, and the opening 3 in this embodiment as well.
6a, 36b, 461, 46b.

The metal wiring connecting 56a and 56bK is omitted.

The embodiment of tIX3 shown in FIG. 3 is characterized in that the high concentration portion 35 at the corner extends slightly from the corner along the resistance pattern. If the lengths of the low concentration portions 32a, 32b of the resistor are accurate, the reproducibility of the resistance value is increased. Further, in order to lower the contact resistance value, high concentration portions 37a and 37b are also provided near the openings 36a and 36b.

In the fourth embodiment shown in FIG. 4, the high 11 degree corner portion 45 is not wide, the low concentration portion 428.42b of the resistor is well reproduced, and it is completely sandwiched between the high concentration regions, making it easy to reproduce the resistance value. This is a structure in which the value increases further. Also, a high concentration portion 47a is provided to lower the contact resistance value.

47b is also provided.

In the fifth embodiment shown in FIG. 5, there is a special structure in which there are two corners, and the low concentration portion 52a of the resistor.

52b are installed in parallel, and the high concentration portions 55 are provided in such a way that they are connected in series.

Also, in order to lower the contact resistance value, the high concentration portion 578
．． 57b is also provided.

As explained in the embodiments above, the present invention is to improve the precision of the resistor by providing high concentration impurity portions at the corners of the resistor having a curved planar structure. Therefore,
The impurities constituting the resistor can be either p-type or n-type impurities. In addition to single crystal semiconductor substrates, the present invention can also be applied to resistors made of polycrystalline semiconductor films and amorphous films.

〔Effect of the invention〕

As explained above, if you can design an accurate resistance value, you can apply the conventionally known theory of metallization, improve design accuracy, and shorten the product development period. Effects such as being able to do this can be obtained.

[Brief explanation of the drawing]

Figures 1 (a) and (b) are a plan view and a sectional view taken along the line A-B of the first embodiment of the present invention, and Figures 2, 3, 4, and 5 are Second invention. Third. 6(a) and Φ) are plan views of the fourth and fifth embodiments, and FIGS.
Each figure is a plan view of a conventional angular resistor. 11, 61 --- Silicon substrate% 12a,
12b. 22a, 22b, 22C, 22d, 22e
, 22f, 22g, 32a, a2b,
42a, 42b. 52a, 52b, 62.72.82---Low concentration P type part, 13.63---Surface protection film, 14a
. 14 b, 64 a, 64 b...-,,, gold maple [,15゜25a, 25b, 25C,25
d, 25e, 25f, 35, 45.65...
...High concentration P type part, 16a, 16b, 26
a, 26b, 36a, 36b. 46a, 46b, 56a, 56b, 6
6a, 66b, 76a, 76b, 86a, B6b・
-...-Opening part, 37m, 37b, 47Jl,
47b, 57a, 57b...high concentration portion of the contact area. Y1ㅅmine'z'12I Kaya 3 Anaimine 4 Old rod length 2

Claims (1)

[Claims] In a semiconductor integrated circuit device having a resistor, at least one of the resistors has a curved planar structure with corners instead of a single rectangular structure, and impurities in at least the corner region are higher than the surrounding area. A semiconductor integrated circuit device comprising impurities at a high concentration.