JPS6115370A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6115370A
JPS6115370A JP59135904A JP13590484A JPS6115370A JP S6115370 A JPS6115370 A JP S6115370A JP 59135904 A JP59135904 A JP 59135904A JP 13590484 A JP13590484 A JP 13590484A JP S6115370 A JPS6115370 A JP S6115370A
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
conductivity type
semiconductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59135904A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550866B2 (enrdf_load_html_response
Inventor
Hiromichi Ohashi
弘通 大橋
Akio Nakagawa
明夫 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59135904A priority Critical patent/JPS6115370A/ja
Priority to GB8430147A priority patent/GB2150753B/en
Priority to DE3443854A priority patent/DE3443854C2/de
Publication of JPS6115370A publication Critical patent/JPS6115370A/ja
Priority to US06/858,854 priority patent/US4689647A/en
Priority to US07/807,752 priority patent/US5212396A/en
Publication of JPH0550866B2 publication Critical patent/JPH0550866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59135904A 1983-11-30 1984-06-30 半導体装置 Granted JPS6115370A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59135904A JPS6115370A (ja) 1984-06-30 1984-06-30 半導体装置
GB8430147A GB2150753B (en) 1983-11-30 1984-11-29 Semiconductor device
DE3443854A DE3443854C2 (de) 1983-11-30 1984-11-30 Halbleiteranordnung mit isoliertem Gate
US06/858,854 US4689647A (en) 1983-11-30 1986-04-30 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
US07/807,752 US5212396A (en) 1983-11-30 1991-12-17 Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59135904A JPS6115370A (ja) 1984-06-30 1984-06-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6115370A true JPS6115370A (ja) 1986-01-23
JPH0550866B2 JPH0550866B2 (enrdf_load_html_response) 1993-07-30

Family

ID=15162540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59135904A Granted JPS6115370A (ja) 1983-11-30 1984-06-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6115370A (enrdf_load_html_response)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124178A (ja) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp 電界効果型半導体装置
JPS63150970A (ja) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd 導電変調型絶縁ゲ−トトランジスタ
JPS63211680A (ja) * 1987-02-26 1988-09-02 Toshiba Corp 半導体素子およびその製造方法
JPS63260174A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS63260175A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH02126682A (ja) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH02281737A (ja) * 1989-04-24 1990-11-19 Toshiba Corp 半田バンプ型半導体装置
JPH02309676A (ja) * 1989-05-24 1990-12-25 Meidensha Corp 逆導通形インシュレティッドゲートバイポーラトランジスタ
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
JP2006520103A (ja) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション 被覆ワイヤーで形成された、フリップチップ用被覆金属のスタッドバンプ
JP2007129195A (ja) * 2005-10-05 2007-05-24 Sanken Electric Co Ltd 半導体装置
JP2007134714A (ja) * 2005-11-09 2007-05-31 Infineon Technologies Ag 高い強度をもつパワーｉｇｂｔ
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP2009010414A (ja) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp 電力用半導体装置
JP2009194330A (ja) 2008-02-18 2009-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2010087510A (ja) * 2008-09-30 2010-04-15 Infineon Technologies Austria Ag ロバスト半導体デバイス
US8039879B2 (en) 2007-10-24 2011-10-18 Fuji Electric Co., Ltd. Semiconductor device having a control circuit and method of its manufacture
JP2013247248A (ja) * 2012-05-25 2013-12-09 Fuji Electric Co Ltd 半導体装置の製造方法
JP2015008235A (ja) * 2013-06-25 2015-01-15 富士電機株式会社 半導体装置の製造方法
WO2016110953A1 (ja) * 2015-01-07 2016-07-14 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
US9478647B2 (en) 2014-11-13 2016-10-25 Mitsubishi Electric Corporation Semiconductor device
JP2016189465A (ja) * 2015-03-27 2016-11-04 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ２種類のエミッタ領域を有するエミッタを備えるバイポーラトランジスタデバイス
WO2020174799A1 (ja) * 2019-02-27 2020-09-03 富士電機株式会社 半導体装置
US10991822B2 (en) 2017-02-24 2021-04-27 Mitsubishi Electric Corporation Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
EP4024473A4 (en) * 2019-10-23 2022-10-12 Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd. Insulated gate bipolar transistor, power module, and household electric appliance
EP4187615A1 (en) * 2021-11-30 2023-05-31 Pakal Technologies, Inc. Npnp layered mos-gated trench device having lowered operating voltage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS58124275A (ja) * 1982-01-12 1983-07-23 シ−メンス・アクチエンゲゼルシヤフト Ｍｉｓ電界効果トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS58124275A (ja) * 1982-01-12 1983-07-23 シ−メンス・アクチエンゲゼルシヤフト Ｍｉｓ電界効果トランジスタ

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124178A (ja) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp 電界効果型半導体装置
JPS63150970A (ja) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd 導電変調型絶縁ゲ−トトランジスタ
JPS63211680A (ja) * 1987-02-26 1988-09-02 Toshiba Corp 半導体素子およびその製造方法
JPS63260174A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS63260175A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
US5086324A (en) * 1988-07-11 1992-02-04 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
JPH02126682A (ja) * 1988-11-07 1990-05-15 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH02281737A (ja) * 1989-04-24 1990-11-19 Toshiba Corp 半田バンプ型半導体装置
JPH02309676A (ja) * 1989-05-24 1990-12-25 Meidensha Corp 逆導通形インシュレティッドゲートバイポーラトランジスタ
US5519245A (en) * 1989-08-31 1996-05-21 Nippondenso Co., Ltd. Insulated gate bipolar transistor with reverse conducting current
JP2006520103A (ja) * 2003-03-10 2006-08-31 フェアチャイルド・セミコンダクター・コーポレーション 被覆ワイヤーで形成された、フリップチップ用被覆金属のスタッドバンプ
US7932171B2 (en) 2003-03-10 2011-04-26 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP2007129195A (ja) * 2005-10-05 2007-05-24 Sanken Electric Co Ltd 半導体装置
JP2007134714A (ja) * 2005-11-09 2007-05-31 Infineon Technologies Ag 高い強度をもつパワーｉｇｂｔ
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
US8039879B2 (en) 2007-10-24 2011-10-18 Fuji Electric Co., Ltd. Semiconductor device having a control circuit and method of its manufacture
JP2009194330A (ja) 2008-02-18 2009-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2009010414A (ja) * 2008-08-26 2009-01-15 Mitsubishi Electric Corp 電力用半導体装置
US8828810B2 (en) 2008-09-30 2014-09-09 Infineon Technologies Austria Ag Method of producing a semiconductor including two differently doped semiconductor zones
JP2010087510A (ja) * 2008-09-30 2010-04-15 Infineon Technologies Austria Ag ロバスト半導体デバイス
JP2013247248A (ja) * 2012-05-25 2013-12-09 Fuji Electric Co Ltd 半導体装置の製造方法
JP2015008235A (ja) * 2013-06-25 2015-01-15 富士電機株式会社 半導体装置の製造方法
US9478647B2 (en) 2014-11-13 2016-10-25 Mitsubishi Electric Corporation Semiconductor device
US10164083B2 (en) 2015-01-07 2018-12-25 Mitsubishi Electric Corporation Silicon carbide semiconductor device and manufacturing method therefor
JPWO2016110953A1 (ja) * 2015-01-07 2017-04-27 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
WO2016110953A1 (ja) * 2015-01-07 2016-07-14 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
JP2016189465A (ja) * 2015-03-27 2016-11-04 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ２種類のエミッタ領域を有するエミッタを備えるバイポーラトランジスタデバイス
US10224206B2 (en) 2015-03-27 2019-03-05 Infineon Technologies Ag Bipolar transistor device with an emitter having two types of emitter regions
US11646369B2 (en) 2017-02-24 2023-05-09 Mitsubishi Electric Corporation Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
US10991822B2 (en) 2017-02-24 2021-04-27 Mitsubishi Electric Corporation Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
JPWO2020174799A1 (ja) * 2019-02-27 2021-09-13 富士電機株式会社 半導体装置
US11488951B2 (en) 2019-02-27 2022-11-01 Fuji Electric Co., Ltd. Semiconductor device
WO2020174799A1 (ja) * 2019-02-27 2020-09-03 富士電機株式会社 半導体装置
US11810913B2 (en) 2019-02-27 2023-11-07 Fuji Electric Co., Ltd. Semiconductor device
EP4024473A4 (en) * 2019-10-23 2022-10-12 Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd. Insulated gate bipolar transistor, power module, and household electric appliance
US12279441B2 (en) 2019-10-23 2025-04-15 Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd. Insulated gate bipolar transistor, power module, and living appliance
EP4187615A1 (en) * 2021-11-30 2023-05-31 Pakal Technologies, Inc. Npnp layered mos-gated trench device having lowered operating voltage

Also Published As

Publication number Publication date
JPH0550866B2 (enrdf_load_html_response) 1993-07-30

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Legal Events

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