JPS61150378A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS61150378A
JPS61150378A JP59278432A JP27843284A JPS61150378A JP S61150378 A JPS61150378 A JP S61150378A JP 59278432 A JP59278432 A JP 59278432A JP 27843284 A JP27843284 A JP 27843284A JP S61150378 A JPS61150378 A JP S61150378A
Authority
JP
Japan
Prior art keywords
region
layer
layers
depletion layer
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59278432A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513387B2 (enExample
Inventor
Kenichi Muramoto
村本　顕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59278432A priority Critical patent/JPS61150378A/ja
Priority to DE19853544149 priority patent/DE3544149A1/de
Publication of JPS61150378A publication Critical patent/JPS61150378A/ja
Priority to US07/188,070 priority patent/US4884113A/en
Publication of JPH0513387B2 publication Critical patent/JPH0513387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
JP59278432A 1984-12-25 1984-12-25 電界効果トランジスタ Granted JPS61150378A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59278432A JPS61150378A (ja) 1984-12-25 1984-12-25 電界効果トランジスタ
DE19853544149 DE3544149A1 (de) 1984-12-25 1985-12-13 Doppelt diffundierter Isolierschicht-Feldeffekttransistor
US07/188,070 US4884113A (en) 1984-12-25 1988-04-28 Double-diffused, insulated-gate, field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59278432A JPS61150378A (ja) 1984-12-25 1984-12-25 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS61150378A true JPS61150378A (ja) 1986-07-09
JPH0513387B2 JPH0513387B2 (enExample) 1993-02-22

Family

ID=17597262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59278432A Granted JPS61150378A (ja) 1984-12-25 1984-12-25 電界効果トランジスタ

Country Status (3)

Country Link
US (1) US4884113A (enExample)
JP (1) JPS61150378A (enExample)
DE (1) DE3544149A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115873A (ja) * 1985-11-15 1987-05-27 Matsushita Electronics Corp 縦型ｍｏｓ電界効果トランジスタ
JP2001015755A (ja) * 1999-06-03 2001-01-19 Intersil Corp 耐久性の高い低オン抵抗の改良された本体ダイオード逆方向回復特性を有する低電圧二重ウェルｍｏｓデバイス
JP2007081436A (ja) * 1996-10-18 2007-03-29 Hitachi Ltd 半導体装置及びそれを使った電力変換装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6449273A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH0783119B2 (ja) * 1988-08-25 1995-09-06 日本電気株式会社 電界効果トランジスタ
US5072267A (en) * 1989-06-28 1991-12-10 Nec Corporation Complementary field effect transistor
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
EP0735591B1 (en) * 1995-03-31 1999-09-08 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Improved DMOS device structure, and related manufacturing process
AU5475100A (en) * 1999-06-09 2000-12-28 International Rectifier Corporation Dual epitaxial layer for high voltage vertical conduction power mosfet devices
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US9673103B2 (en) * 2015-06-30 2017-06-06 Stmicroelectronics, Inc. MOSFET devices with asymmetric structural configurations introducing different electrical characteristics
US11134240B2 (en) 2017-06-21 2021-09-28 Sony Semiconductor Solutions Corporation Device and method for determining a fingerprint for a device using a voltage offset distribution pattern

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPS59167066A (ja) * 1983-03-14 1984-09-20 Nissan Motor Co Ltd 縦形ｍｏｓｆｅｔ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115873A (ja) * 1985-11-15 1987-05-27 Matsushita Electronics Corp 縦型ｍｏｓ電界効果トランジスタ
JP2007081436A (ja) * 1996-10-18 2007-03-29 Hitachi Ltd 半導体装置及びそれを使った電力変換装置
JP2001015755A (ja) * 1999-06-03 2001-01-19 Intersil Corp 耐久性の高い低オン抵抗の改良された本体ダイオード逆方向回復特性を有する低電圧二重ウェルｍｏｓデバイス

Also Published As

Publication number Publication date
JPH0513387B2 (enExample) 1993-02-22
DE3544149A1 (de) 1986-07-03
US4884113A (en) 1989-11-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term